DMTH6015LDVW-13

$0.26

Description：MOSFET 2N-CH 60V 9.2A PWRDI3333
Series：-

SKU:d7265976f93e Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 60V 9.2A PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：60V
Current - Continuous Drain (Id) @ 25°C：9.2A (Ta), 24.5A (Tc)
Rds On (Max) @ Id, Vgs：20.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：14.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：825pF @ 30V
Power - Max：1.46W (Ta)
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-PowerVDFN
Supplier Device Package：PowerDI3333-8 (Type UXD)
Grade：-
Qualification：-

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DMTH6015LDVW-13

Overview

The DMTH6015LDVW-13 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 60V and operates within a junction temperature range of -55°C to +175°C. The device provides a maximum on-resistance (RDS(ON)) of 20.5mΩ at VGS = 10V and 27mΩ at VGS = 4.5V. Continuous drain current reaches 24.5A at TC = +25°C with VGS = 10V. Packaged in a POWERDI3333-8/SWP (Type UXD) case, it includes ESD protected gates and wettable flank terminals for improved optical inspection.

Feature Summary

Rated for high ambient temperature environments up to +175°C
Features low RDS(ON) to minimize on-state losses
Includes 100% Unclamped Inductive Switching (UIS) test in production
Equipped with wettable flank terminals for improved optical inspection

Applications

Wireless Charging
DC-DC Converters
Power Management

Procurement Notes

Verify the specific ordering suffix against official documentation before procurement. The suffix indicates packaging quantity; verify that the required reel size matches your manufacturing equipment specifications. Confirm RoHS compliance status and environmental declarations directly from the manufacturer's latest datasheet or quality statements prior to finalizing orders.

Selection Notes

Select this component for applications requiring dual N-channel MOSFETs in compact surface-mount packages. Ensure the gate drive voltage meets the minimum requirements for the desired RDS(ON) performance level. Evaluate thermal management strategies based on the specified thermal resistance values and expected power dissipation under load conditions.

Part Context

This part belongs to the DMTH6015 series of dual N-channel enhancement mode MOSFETs. It utilizes the POWERDI3333-8/SWP package type, designed for efficient power management solutions. The series is characterized by its ability to maintain superior switching performance while minimizing conduction losses.

Replacement Considerations

Consult the manufacturer's official documentation for verified substitute part numbers. Cross-compatibility should be validated against pinout configurations, electrical ratings, and thermal characteristics. Do not assume interchangeability without confirming mechanical and electrical alignment with the original design requirements.