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The DMTH6016LFDFWQ-7 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 60V drain-source breakdown voltage and a continuous drain current of 41A at 25°C case temperature. The device exhibits a maximum on-resistance of 16mΩ at VGS=10V. It operates within a junction temperature range of -55°C to +175°C and is qualified under AEC-Q101 standards for automotive applications.
Verify the specific suffix 'Q' indicates AEC-Q101 automotive qualification status as per manufacturer documentation. Confirm the PowerDI3333-8 package dimensions match PCB layout requirements. Ensure sourcing channels provide original manufacturer packaging to guarantee component authenticity and traceability.
Select this component for high-density automotive designs requiring robust switching performance in limited space. The low gate charge supports fast switching speeds, reducing dynamic losses. Verify that the 60V rating provides sufficient margin for the target application's supply voltage and transient conditions.
This part belongs to the DMTH6016 series of ultra-small automotive MOSFETs from Diodes Incorporated. These devices are engineered to replace larger packages like SOT223, offering significantly higher power density. The series targets demanding environments where size constraints and thermal resilience are critical design factors.
Check pinout compatibility and thermal resistance values when substituting. Verify that alternative components meet the same AEC-Q101 automotive qualification standards and support the required +175°C operating temperature range.