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Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 9.2A PWRDI50
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：9.2A (Ta), 33.2A (Tc)
- Rds On (Max) @ Id, Vgs：19mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：17nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：864pF @ 30V
- Power - Max：2.5W (Ta), 37.5W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerTDFN
- Supplier Device Package：PowerDI5060-8
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The DMTH6016LPD-13 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a PowerDI5060-8 package and supports junction temperatures up to +175°C. Key electrical parameters include a drain-source voltage (BVDSS) of 60V, a maximum on-resistance (RDS(ON)) of 19mΩ at VGS=10V, and a continuous drain current (ID) of 33.2A at TC=+25°C. The device has a gate threshold voltage (VGS(TH)) ranging from 1V to 2.5V, total gate charge (Qg) of 17nC at VGS=10V, and input capacitance (Ciss) of 864pF.
Feature Summary
- Rated for operation in high ambient temperature environments with a maximum junction temperature of +175°C.
- Manufactured with 100% Unclamped Inductive Switching (UIS) testing to ensure application reliability.
- Designed to minimize on-state resistance while maintaining fast switching speeds and low input capacitance.
Applications
- Engine-management systems
- Body control electronics
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the required tape and reel packaging quantity of 2,500 units. Confirm that the component meets RoHS compliance and halogen-free requirements if mandated by the project specifications. Ensure the selected variant matches the intended thermal management strategy given the specified power dissipation ratings.
Selection Notes
Select this component when a dual N-channel configuration is required within a compact PowerDI5060-8 footprint. Consider the 19mΩ RDS(ON) specification at VGS=10V for conduction loss calculations. Evaluate the thermal resistance values against the expected operating environment to determine if additional heatsinking or PCB copper area is necessary for sustained performance.
Part Context
This part belongs to the DMTH6016 series of dual N-channel MOSFETs from Diodes Incorporated. It shares the same core electrical characteristics as the automotive-qualified DMTH6016LPDQ variant but is designated for general industrial applications. The device utilizes silicon technology and is housed in a lead-free, molded plastic PowerDI package designed for surface-mount assembly.
Replacement Considerations
The DMTH6016LPDQ is an automotive-compliant alternative within the same family offering identical electrical performance. Verify pinout compatibility and thermal resistance specifications when substituting with other dual N-channel MOSFETs in the PowerDI5060-8 package. Cross-referencing datasheets is recommended to confirm matching RDS(ON) and gate charge parameters.
