DMTH6016LPDQ-13

$1.44

Description：MOSFET 2N-CH 60V 9.2A PWRDI50
Series：-

SKU:65b1edb8dc09 Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 60V 9.2A PWRDI50
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：60V
Current - Continuous Drain (Id) @ 25°C：9.2A (Ta), 33.2A (Tc)
Rds On (Max) @ Id, Vgs：19mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：17nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：864pF @ 30V
Power - Max：2.5W (Ta), 37.5W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-PowerTDFN
Supplier Device Package：PowerDI5060-8
Grade：Automotive
Qualification：AEC-Q101

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DMTH6016LPDQ-13

Overview

The DMTH6016LPDQ is a dual N-channel enhancement mode MOSFET designed for automotive applications. It features a maximum drain-source voltage (VDS) of 60V and a continuous drain current (ID) of 33.2A at TC = +25°C. The device achieves a maximum on-resistance (RDS(ON)) of 19mΩ at VGS = 10V and 28mΩ at VGS = 4.5V. Total gate charge (QG) is typically 8.4nC at VGS = 4.5V and 17nC at VGS = 10V. Input capacitance (CISS) is typically 864pF at VDS = 30V. The component operates within a junction temperature range of -55°C to +175°C.

Feature Summary

Rated to +175°C for high ambient temperature environments
100% Unclamped Inductive Switching (UIS) tested in production
Low input capacitance and fast switching speed
Totally lead-free, fully RoHS compliant, and halogen/antimony free

Applications

Engine management systems
Body control electronics
DC-DC converters

Procurement Notes

Verify the specific ordering suffix '-13' when sourcing components to ensure correct tape and reel packaging quantities. Confirm that the part number includes the 'Q' designation to guarantee AEC-Q101 qualification and PPAP capability required for automotive manufacturing lines. Cross-reference datasheet revision DS39429 Rev. 4-2 during procurement to align with current electrical specifications.

Selection Notes

Select this component for circuits requiring robust performance under high thermal stress up to 175°C. Ensure the gate drive voltage meets the minimum threshold for the desired RDS(ON) level, as resistance increases significantly below 4.5V. Verify that the PCB layout supports the PowerDI5060-8 package dimensions and thermal requirements for the intended power dissipation levels.

Part Context

This device belongs to Diodes Incorporated's DMTH series of automotive-grade MOSFETs. It utilizes the PowerDI5060-8 surface-mount package, which provides a compact footprint suitable for space-constrained designs. The series is characterized by low on-resistance and high reliability standards mandated by automotive industry regulations.

Replacement Considerations

Direct substitutes include other DMTH6016 variants such as DMTH6016LPD or DMTH6016LPDWQ. When replacing, verify that the alternative package type matches the existing board footprint and that the electrical parameters, particularly RDS(ON) and QG, meet the original design constraints.