DMTH6030LFDFW-13

$0.11

Description：IC
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:0471f2b0b8c9 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：IC
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：6.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：25mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：9.3 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：452 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：1.4W (Ta)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：U-DFN2020-6 (SWP) (Type UXG)
Package / Case：6-UDFN Exposed Pad

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DMTH6030LFDFW-13

Overview

The DMTH6030LFDFW-13 is a surface-mount N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (V_DSS) of 60 V and operates with a maximum junction temperature of +175°C. The device provides a continuous drain current (I_D) of 6.2 A at +25°C ambient temperature, with a static drain-source on-resistance (R_DS(ON)) of 25 mΩ maximum at V_GS = 10 V and I_D = 6.5 A. It utilizes a U-DFN2020-6/SWP package.

Feature Summary

Rated for operation up to +175°C junction temperature, suitable for high ambient temperature environments.
Manufactured using a new generation process designed to minimize on-state resistance while maintaining superior switching performance.
Features a 0.6 mm profile and a PCB footprint of 4mm², ideal for low-profile applications.
Sidewall plated construction facilitates improved optical inspection during manufacturing.

Applications

Power-management functions
DC-DC converters
Backlighting

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 10,000-unit reel packing configuration as defined in the manufacturer's ordering information. Confirm that the component meets RoHS 3 compliance and is halogen-free if required by your assembly specifications. Ensure the design accommodates the U-DFN2020-6/SWP package dimensions and recommended pad layout provided in the datasheet.

Selection Notes

Select this component when an N-channel MOSFET requires a 60 V rating and operation at elevated temperatures up to +175°C. The low R_DS(ON) characteristics make it appropriate for high-efficiency power management circuits where minimizing conduction losses is critical. Consider the U-DFN2020-6 package size constraints and the availability of automotive-compliant variants if higher reliability standards are necessary.

Part Context

This part belongs to the DMTH series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It is distinct from other series members by its specific 60 V rating, 6.2 A current capability, and U-DFN2020-6/SWP packaging. The product line emphasizes high thermal stability and low on-resistance for modern power management applications.

Replacement Considerations

An automotive-compliant version of this component is available under the separate part number DMTH6030LFDFWQ. Verify pinout compatibility and electrical parameter equivalence before substituting any alternative MOSFETs from different manufacturers.

FAQ

Is the DMTH6030LFDFW qualified for automotive applications?

No, the standard DMTH6030LFDFW is not explicitly stated as automotive-qualified. An automotive-compliant variant, DMTH6030LFDFWQ, is available under a separate datasheet.