DMTH6030LFDFW-7

$0.12

Description：IC
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:78f8306422b6 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：IC
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：6.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：25mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：9.3 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：452 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：1.4W (Ta)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：U-DFN2020-6 (SWP) (Type UXG)
Package / Case：6-UDFN Exposed Pad

Download product information

DMTH6030LFDFW-7

Overview

The DMTH6030LFDFW is a 60V N-channel enhancement mode MOSFET designed for high-efficiency power management. It features a maximum drain-source voltage (BVDSS) of 60V and a low on-state resistance (RDS(ON)) of 25mΩ at VGS=10V, enabling a continuous drain current (ID) of 6.2A at +25°C. The device operates within a junction temperature range of -55°C to +175°C and utilizes a U-DFN2020-6/SWP package with a 0.6mm profile.

Feature Summary

Rated for operation up to +175°C, suitable for high ambient temperature environments
Features a 0.6mm low-profile package ideal for space-constrained applications
Includes sidewall plating to facilitate improved optical inspection during manufacturing

Applications

Power-management functions
DC-DC converters
Backlighting circuits

Procurement Notes

Verify the specific ordering suffix against official Diodes Incorporated documentation to confirm packing quantity and carrier type. Confirm that the required RoHS compliance level matches the project specifications. Ensure the selected component meets all JEDEC standards referenced in the datasheet for intended reliability requirements.

Selection Notes

Select this component when a 60V rating and low RDS(ON) are required for efficient switching. Consider the U-DFN2020-6 package dimensions for PCB layout constraints. Evaluate thermal performance based on the specified RθJA values for the target mounting conditions.

Part Context

This part belongs to the DMTH series of N-channel MOSFETs from Diodes Incorporated. It is distinct from automotive-compliant variants such as the DMTH6030LFDFWQ. The device is manufactured using silicon technology and is housed in a molded plastic U-DFN2020-6/SWP package.