DMTH61M5SPSWQ-13

DMTH61M5SPSWQ-13

$0.79
  • Description:MOSFET BVDSS: 41V~60V POWERDI506
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR)

SKU:fc160fe7227f Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET BVDSS: 41V~60V POWERDI506
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):60 V
  • Current - Continuous Drain (Id) @ 25°C:225A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:1.5mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:130.6 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:8306 pF @ 30 V
  • FET Feature:-
  • Power Dissipation (Max):3.2W (Ta), 167W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Supplier Device Package:PowerDI5060-8 (SWP)
  • Package / Case:8-PowerTDFN

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DMTH61M5SPSWQ-13

Overview

The DMTH61M5SPSWQ is a 60V N-channel enhancement mode MOSFET in a PowerDI5060-8 package. It features a maximum drain-source voltage of 60V and a continuous drain current of 225A at TC = +25°C. The device has a maximum on-resistance of 1.5mΩ at VGS = 10V. It supports an operating temperature range from -55°C to +175°C and is qualified to AEC-Q101 standards.

Feature Summary

  • Rated for operation up to +175°C junction temperature, suitable for high ambient environments
  • 100% unclamped inductive switching (UIS) tested in production for robustness
  • Wettable flank design enables improved optical inspection
  • Manufactured in IATF 16949 certified facilities with PPAP capability

Applications

  • Engine Management Systems
  • Body Control Electronics
  • DC-DC Converters

Procurement Notes

Verify the specific ordering suffix matches the required packaging configuration. Confirm that the component meets all automotive quality requirements, including AEC-Q101 qualification and PPAP documentation. Ensure the manufacturer's marking code aligns with the expected product type and date code format before finalizing procurement orders.

Selection Notes

Select this component when a low on-resistance value is critical for minimizing conduction losses in high-current applications. Consider the thermal resistance characteristics and the ability to handle high pulsed currents if the application involves significant inductive loads or transient conditions requiring robust avalanche energy handling capabilities.

Part Context

This part belongs to Diodes Incorporated's automotive-grade MOSFET portfolio designed for stringent reliability standards. It utilizes the PowerDI5060-8 surface-mount package to provide efficient heat dissipation and compact footprint solutions for modern electronic control units and power distribution systems within vehicles.

Replacement Considerations

Consult official substitution lists for verified alternatives. Cross-reference pin configurations and electrical parameters carefully to ensure compatibility with existing circuit designs without modifying board layouts or driver circuits.

FAQ

Is the DMTH61M5SPSWQ qualified for automotive applications?

Yes, it is qualified to AEC-Q101 standards and manufactured in IATF 16949 certified facilities.

What is the maximum junction temperature rating?

The device is rated to operate at junction temperatures up to +175°C.

DMTH61M5SPSWQ-13DMTH61M5SPSWQ-13
$0.79
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