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Product Detailed Parameters
- Description：MOSFET BVDSS: 41V~60V POWERDI506
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：215A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：1.6mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：130.6 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：8306 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：3.2W (Ta), 167W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PowerDI5060-8 (Type K)
- Package / Case：8-PowerTDFN
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Overview
The DMTH61M8SPSQ-13 is a surface-mount N-channel enhancement mode MOSFET in a PowerDI5060-8 (Type K) package. It features a drain-source voltage of 60V and a maximum continuous drain current of 215A at TC = +25°C. The device exhibits a static drain-source on-resistance of 1.6mΩ max at VGS = 10V and ID = 30A. Total gate charge is 130.6nC, with an input capacitance of 8306pF. Operating junction temperature ranges from -55°C to +175°C.
Feature Summary
- Qualified to AEC-Q101 standards for automotive applications
- Rated for operation up to +175°C junction temperature
- 100% Unclamped Inductive Switching (UIS) tested in production
- Manufactured in IATF 16949 certified facilities
Applications
- Engine Management Systems
- Body Control Electronics
- DC-DC Converters
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 2,500-unit tape and reel packaging configuration. Confirm that the component meets RoHS 3 compliance requirements and ensure the supply chain utilizes authorized channels to guarantee authenticity and traceability for automotive-grade parts.
Selection Notes
Select this component when high current handling and low conduction losses are required in compact automotive designs. The PowerDI5060-8 package provides efficient thermal dissipation through the exposed drain pad. Ensure the application environment supports the specified +175°C operating temperature range and requires AEC-Q101 qualification.
Part Context
This part belongs to the DMTH series of automotive-grade N-channel MOSFETs from Diodes Incorporated. It utilizes silicon technology within the PowerDI family of lead-free, halogen-free packages designed for high reliability and robust performance in demanding electronic environments.
Replacement Considerations
Consult official manufacturer documentation for verified substitute part numbers. Cross-referencing should strictly match voltage ratings, current capabilities, and package dimensions.
