DMTH62M7SPSW-13

$0.60

Description：MOSFET BVDSS: 41V~60V POWERDI506
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:5c1b963a55d3 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 41V~60V POWERDI506
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：170A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：2.7mOhm @ 30A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：68.7 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：4973 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：3W (Ta), 150W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI5060-8 (Type UX)
Package / Case：8-PowerTDFN

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DMTH62M7SPSW-13

Overview

The DMTH62M7SPSW-13 is a 60V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum on-state resistance of 2.7mΩ at VGS=10V and a continuous drain current of 170A at TC=+25°C. The device operates within a junction temperature range of -55°C to +175°C. Packaged in a PowerDI5060-8/SWP (Type UX) carrier, it supports high-efficiency power management applications.

Feature Summary

Rated for operation up to +175°C junction temperature
100% Unclamped Inductive Switching (UIS) tested in production
Thermally efficient package design for cooler running applications
Low RDS(ON) minimizes on-state losses

Applications

Switching
Synchronous rectifications
DC-DC converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 2,500-unit Tape & Reel packaging configuration. Confirm that the standard DMTH62M7SPSW variant meets all functional requirements before considering automotive-compliant alternatives like the DMTH62M7SPSWQ. Ensure compatibility with the PowerDI5060-8/SWP footprint during PCB layout.

Selection Notes

Select this component for designs requiring low on-state resistance and high current handling capabilities in compact form factors. The ultra-low profile under 1.1mm suits thin application constraints. Evaluate thermal performance against the specified junction-to-case resistance when designing heat dissipation strategies for high ambient temperature environments.

Part Context

This part belongs to Diodes Incorporated's PowerDI series of surface-mount MOSFETs. It utilizes a molded plastic 'Green' molding compound with matte tin annealed terminals over a copper leadframe. The device is compliant with RoHS directives and is halogen and antimony free.