DMTH62M7SPSWQ-13

$0.64

Description：MOSFET BVDSS: 41V~60V POWERDI506
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:8196c381a10d Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 41V~60V POWERDI506
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：170A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：2.7mOhm @ 30A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：68.7 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：4973 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：3W (Ta), 150W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI5060-8 (Type UX)
Package / Case：8-PowerTDFN

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DMTH62M7SPSWQ-13

Overview

The DMTH62M7SPSWQ is a 60V N-channel enhancement mode MOSFET designed for automotive applications. It operates up to +175°C and features a PowerDI5060-8 package with a profile under 1.1mm. Key electrical parameters include a maximum drain-source voltage (BVDSS) of 60V, a typical static on-resistance (RDS(ON)) of 2.1mΩ at VGS=10V, and a continuous drain current (ID) of 170A at TC=+25°C. The device supports a pulsed drain current of 680A and has a junction-to-case thermal resistance of 1°C/W.

Feature Summary

Qualified to AEC-Q101 standards with PPAP capability for automotive use
Rated for operation in high ambient temperature environments up to +175°C
Features a thermally efficient package with a low profile under 1.1mm
Includes 100% unclamped inductive switching (UIS) testing in production

Applications

Switching circuits
Synchronous rectifications
DC-DC converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 2,500-unit tape and reel carrier configuration. Confirm that the component meets RoHS 3 and halogen-free requirements if mandated by your design specifications. Ensure compatibility with IATF 16949 certified manufacturing processes required for your automotive supply chain.

Selection Notes

Select this component when a 60V rating and high current handling are required in a thin form factor. The low RDS(ON) minimizes conduction losses, while the robust thermal characteristics support high-power density designs. Verify that the gate threshold voltage range aligns with your driver circuit capabilities for optimal switching performance.

Part Context

This part belongs to Diodes Incorporated's DMTH series of automotive-grade MOSFETs. It utilizes the PowerDI5060-8/SWP package, which provides enhanced thermal dissipation compared to standard plastic packages. The 'SWP' designation indicates a specific lead frame and molding compound configuration optimized for surface mount reliability.

Replacement Considerations

Consult official cross-reference lists for verified substitutes. Ensure any replacement maintains the same 60V BVDSS, similar RDS(ON), and compatible PowerDI5060-8 footprint. Verify that alternative parts also meet AEC-Q101 qualification if automotive compliance is required.