DMTH62M8SPS-13

$0.46

Description：MOSFET BVDSS: 41V-60V POWERDI506
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:173c7e84e7e8 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 41V-60V POWERDI506
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：2.8mOhm @ 50A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：95.4 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：4556 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：3.2W
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PowerDI5060-8 (Type K)
Package / Case：8-PowerTDFN

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DMTH62M8SPS-13

Overview

The DMTH62M8SPS-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 60V and a low static drain-source on-resistance (RDS(ON)) of 2.8mΩ at VGS=10V and ID=50A. The device supports a continuous drain current of 100A at TC=+25°C and operates within a junction temperature range of -55°C to +175°C. Packaged in a PowerDI5060-8 surface-mount format, it includes an internal body diode with a forward voltage of 1.2V max at IS=20A.

Feature Summary

Rated for operation up to +175°C junction temperature for high ambient environments
100% unclamped inductive switching (UIS) tested in production for reliability
Thermally efficient package design enables cooler running applications
Low RDS(ON) minimizes on-state power losses

Applications

Switching circuits
Synchronous rectification
DC-DC converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 2,500-unit tape and reel packaging configuration. Confirm that the component meets RoHS directives and is halogen and antimony free as defined by the manufacturer's green product standards. Ensure the application environment remains within the specified thermal limits to maintain performance integrity.

Selection Notes

Select this component when a 60V rating and high current handling capability are required in a thin profile package. The low on-resistance makes it suitable for high-efficiency power management designs. Consider the thermal resistance characteristics and the requirement for robust UIS performance when evaluating suitability for inductive load applications.

Part Context

This part belongs to the DMTH series of N-channel MOSFETs from Diodes Incorporated. It utilizes the PowerDI5060-8 case style, which provides a compact footprint with an exposed drain pad for improved heat dissipation. The series is designed to balance low conduction losses with fast switching speeds for modern power electronics.

Replacement Considerations

Consult official substitution lists or datasheets for compatible parts within the same voltage and current class. Verify pinout compatibility and thermal resistance specifications before replacing the original component in existing designs.