DMTH63M5LFG-13

$0.37

Description：IC
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:21cce9b81a58 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：IC
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：22A (Ta), 93A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：3.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：41.8 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2378 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：3.4W (Ta), 63.3W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：POWERDI3333-8
Package / Case：8-PowerVDFN

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DMTH63M5LFG-13

Overview

The DMTH63M5LFG-13 is a 60V N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI3333-8 package. It features a maximum drain-source voltage (BVDSS) of 60V and a low on-state resistance (RDS(ON)) of 3.8mΩ at VGS=10V and 6.0mΩ at VGS=4.5V. The device supports continuous drain currents up to 93A at TC=+25°C and 22A at TA=+25°C. It operates within a junction temperature range of -55°C to +175°C and includes 100% UIS testing for reliability.

Feature Summary

Rated for operation up to +175°C, suitable for high ambient temperature environments
Features 100% Unclamped Inductive Switching (UIS) testing in production for robustness
Low RDS(ON) minimizes on-state power losses
Small form factor thermally efficient package enables higher density end products

Applications

Synchronous rectification
Motor controls
DC-DC converters
Power management

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the required tape and reel quantity of 3000 units. Confirm that the standard JEDEC qualification meets the project's reliability requirements, as automotive applications requiring AEC-Q100/101/104/200 qualification or PPAP capability require parts with the 'Q' suffix. Ensure the PowerDI3333-8 footprint matches the PCB design.

Selection Notes

Select this component when a compact surface-mount solution is needed for high-current switching applications operating at 60V. The PowerDI3333-8 package occupies significantly less board area than traditional SO-8 packages while providing comparable thermal performance. Consider the low gate charge and fast switching characteristics for high-frequency power conversion designs where efficiency is critical.

Part Context

This part belongs to Diodes Incorporated's DMTH series of N-channel MOSFETs designed for high-efficiency power management. The series emphasizes minimizing on-state resistance while maintaining superior switching performance. The DMTH63M5LFG utilizes a molded plastic "Green" molding compound that is halogen and antimony-free, complying with RoHS directives.

Replacement Considerations

For automotive applications requiring specific change control, refer to the related automotive grade part with the Q-suffix. Verify pinout compatibility and thermal resistance values when substituting with other MOSFETs in similar voltage and current ratings.

FAQ

Is this part qualified for automotive applications?

No, this specific part number is qualified to JEDEC standards. For automotive applications requiring AEC-Q100/101/104/200 qualification and PPAP capability, you must select the related automotive grade part with the Q-suffix.