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Product Detailed Parameters
- Description：IC
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：22A (Ta), 93A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：3.8mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：41.8 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2378 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：3.4W (Ta), 63.3W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：POWERDI3333-8
- Package / Case：8-PowerVDFN
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Overview
The DMTH63M5LFG-7 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 60V and operates within a junction temperature range of -55°C to +175°C. The device utilizes a PowerDI3333-8 surface-mount package. Key electrical parameters include a maximum static drain-source on-resistance (RDS(ON)) of 3.8mΩ at VGS=10V and 6.0mΩ at VGS=4.5V. Continuous drain current ratings are 93A at TC=+25°C and 22A at TA=+25°C.
Feature Summary
- Rated for operation up to +175°C, suitable for high ambient temperature environments
- Manufactured with a small form factor thermally efficient package that occupies 33% less board area than SO-8 equivalents
- Subjected to 100% Unclamped Inductive Switching (UIS) testing in production to ensure robustness
Applications
- Synchronous rectification
- Motor controls
- DC-DC converters
- Power management
Procurement Notes
Verify the specific ordering suffix against official documentation before procurement. The '-7' suffix indicates a standard tape and reel packing quantity of 2000 units per carrier. Confirm that the required component meets all applicable JEDEC standards for high reliability and verify compliance with RoHS directives and halogen-free requirements as defined by the manufacturer.
Selection Notes
Select this component when low on-state resistance and superior switching performance are required for high-efficiency power management designs. The device is appropriate for applications demanding high continuous current handling capabilities within a compact footprint. Ensure the thermal design accommodates the specified junction-to-ambient thermal resistance values under expected operating conditions.
Part Context
This part belongs to the DMTH series of N-channel enhancement mode MOSFETs from Diodes Incorporated. These devices are engineered to minimize conduction losses while maintaining fast switching characteristics. The product line targets modern electronic systems requiring high power density and improved thermal efficiency in space-constrained layouts.
Replacement Considerations
For automotive applications requiring specific change control or qualification to AEC-Q100/101/104/200 standards, consult the related automotive grade parts featuring the Q-suffix. Verify pinout compatibility and thermal characteristics when substituting with other MOSFETs in the same package family.
