DMTH63M5LFGQ-13

Overview

The DMTH63M5LFGQ-13 is a 60V N-channel enhancement mode MOSFET in a PowerDI3333-8 package. It features a maximum drain-source voltage of 60V and continuous drain currents of 93A at TC=+25°C or 22A at TA=+25°C. The on-resistance is 3.8mΩ max at VGS=10V and 6.0mΩ max at VGS=4.5V. Total gate charge is 41.2nC at VGS=10V. It operates from -55°C to +175°C, supports 100% UIS testing, and meets AEC-Q101 automotive standards.

Feature Summary

• Rated for operation up to +175°C junction temperature
• 100% unclamped inductive switching (UIS) tested in production
• Small form factor thermally efficient package enables higher density end products
• Occupies 33% of the board area occupied by SO-8 packages

Applications

• Synchronous rectification
• Motor controls
• DC-DC converters
• Power management

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 3000-unit tape and reel carrier configuration. Confirm that the component meets the required PPAP documentation standards for your specific automotive supply chain requirements. Ensure the IATF16949 certified manufacturing facility aligns with your quality control protocols before finalizing procurement.

Selection Notes

Select this component when high current handling and low on-resistance are critical for power efficiency. The small PowerDI3333-8 footprint is advantageous for space-constrained designs requiring thermal performance comparable to larger packages. Verify that the 60V rating provides sufficient margin for your specific circuit's peak voltage transients.

Part Context

This part belongs to Diodes Incorporated's DMTH series of automotive-grade N-channel MOSFETs. It utilizes the PowerDI3333-8 surface-mount package, which offers a compact alternative to traditional leaded packages while maintaining robust thermal dissipation capabilities suitable for demanding industrial and automotive environments.

Replacement Considerations

DMTH63M5LFGQ-7