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Product Detailed Parameters
- Description：MOSFET BVDSS: 41V~60V POWERDI506
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：105A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：4.1mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：44.8 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2479 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：3.3W (Ta), 84.7W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount, Wettable Flank
- Supplier Device Package：PowerDI5060-8 (Type UX)
- Package / Case：8-PowerTDFN
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Overview
The DMTH63M6LPSW-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated, housed in a PowerDI5060-8/SWP package. It features a drain-source voltage (BVDSS) of 60V and a maximum continuous drain current (ID) of 105A at TC = +25°C. The device exhibits a low static drain-source on-resistance (RDS(ON)) of 4.1mΩ at VGS = 10V and 6.2mΩ at VGS = 4.5V. Total gate charge (Qg) is 44.8nC at VGS = 10V and 23nC at VGS = 4.5V. Thermal resistance from junction to case (RθJC) is 1.77°C/W, with an operating temperature range of -55°C to +175°C.
Feature Summary
- 100% Unclamped Inductive Switching (UIS) tested in production for robust end applications
- Wettable flank design facilitates improved optical inspection
- Lead-free finish compliant with RoHS directives and halogen/antimony free
Applications
- High-frequency switching
- Synchronous rectification
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 2500-unit tape and reel carrier configuration. Confirm that the PowerDI5060-8/SWP Type UX package dimensions align with your PCB footprint requirements. Ensure compliance with J-STD-020 moisture sensitivity level 1 handling procedures during assembly.
Selection Notes
Select this component when high conversion efficiency and minimized power losses are required. The low RDS(ON) and low Qg characteristics support fast switching speeds suitable for high-efficiency power management. Consider the 60V rating and 105A current capability against your specific load and thermal dissipation constraints.
Part Context
This part belongs to the DMTH series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes the PowerDI® 5060-8 surface-mount package designed for superior thermal performance. An automotive-compliant variant is available under the separate datasheet designation DMTH63M6LPSWQ.
Replacement Considerations
The DMTH63M6LPSWQ is the automotive-compliant alternative within the same family. Verify pinout compatibility and electrical parameters before substituting.
