DMTH63M6LPSWQ-13

$0.46

Description：MOSFET BVDSS: 41V~60V POWERDI506
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:b12439021910 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 41V~60V POWERDI506
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：105A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：4.1mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：44.8 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2479 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：3.3W (Ta), 84.7W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI5060-8 (Type UX)
Package / Case：8-PowerTDFN

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DMTH63M6LPSWQ-13

Overview

The DMTH63M6LPSWQ-13 is a 60V N-channel enhancement mode MOSFET in a PowerDI® 5060-8 package. It features a maximum drain-source voltage of 60V and an on-resistance of 4.1mΩ at VGS=10V, supporting 105A continuous drain current at +25°C case temperature. The device operates up to +175°C junction temperature and includes wettable flank terminals for improved inspection.

Feature Summary

Qualified to AEC-Q101 standards with PPAP capability for automotive applications
Manufactured in IATF 16949 certified facilities
100% Unclamped Inductive Switching (UIS) tested in production

Applications

High-frequency switching
Synchronous rectification
DC-DC converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 2500-unit tape and reel packing configuration. Confirm that the PowerDI5060-8/SWP (Type UX) package dimensions match your PCB footprint requirements. Ensure design compliance with the specified thermal resistance values under your actual mounting conditions.

Selection Notes

Select this component for designs requiring high current handling in a compact surface-mount form factor. The low on-resistance minimizes conduction losses, while the robust UIS rating enhances reliability in inductive load scenarios. Verify gate drive voltage compatibility with the specified threshold characteristics for optimal switching performance.

Part Context

This part belongs to Diodes Incorporated's automotive-grade MOSFET portfolio, designed for stringent reliability standards. It utilizes the PowerDI® 5060-8 package, which offers enhanced thermal performance and mechanical stability compared to standard packages, suitable for space-constrained automotive electronics.