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Product Detailed Parameters
- Description：MOSFET N-CH 60V 15.9/45.4A PWRDI
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：15.9A (Ta), 45.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：9.5mOhm @ 13.5A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：33.5 nC @ 10 V
- Vgs (Max)：±16V
- Input Capacitance (Ciss) (Max) @ Vds：1925 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：3.6W (Ta), 29.4W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount, Wettable Flank
- Supplier Device Package：PowerDI3333-8 (SWP) Type UX
- Package / Case：8-PowerVDFN
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Overview
The DMTH69M8LFVW-7 is a 60V N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI3333-8 (SWP) surface-mount package. It features a maximum drain-source on-resistance of 9.5mΩ at VGS=10V and supports a continuous drain current of 45.4A at TC=25°C. The device operates within a junction temperature range of -55°C to +175°C and includes wettable flanks for improved optical inspection.
Feature Summary
- Rated for operation up to +175°C, suitable for high ambient temperature environments
- Manufactured with wettable flank technology to facilitate improved optical inspection
- Qualified to AEC-Q101 standards for automotive-grade reliability
- Subjected to 100% unclamped inductive switching (UIS) testing during production
Applications
- Backlighting circuits
- Power management functions
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix '-7' corresponds to the 2000-unit tape and reel packaging configuration as defined in the manufacturer's documentation. Confirm that the component meets all applicable RoHS and halogen-free requirements relevant to the target deployment region before finalizing procurement specifications.
Selection Notes
Select this component when a compact form factor is required alongside high thermal efficiency. The PowerDI3333-8 package enables higher density designs compared to traditional packages. Ensure gate drive voltages align with the specified thresholds for optimal on-resistance performance under the intended load conditions.
Part Context
This part belongs to the DMTH69 series of N-channel MOSFETs designed by Diodes Incorporated. It utilizes silicon technology and is distinct from automotive-specific variants like the DMTH69M8LFVWQ-7, which carries separate qualification markings despite sharing similar electrical characteristics.
Replacement Considerations
The DMTH69M8LFVWQ-7 is an automotive-compliant alternative available under a separate datasheet. Verify package compatibility and electrical parameter alignment before substituting standard commercial grade parts with qualified automotive versions.
