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Product Detailed Parameters
- Description：MOSFET BVDSS: 61V~100V POWERDI10
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：80 V
- Current - Continuous Drain (Id) @ 25°C：270A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：1.7mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：138 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：8894 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：6W (Ta), 250W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：POWERDI1012-8
- Package / Case：8-PowerSFN
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Overview
The DMTH8001STLWQ-13 is an N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a POWERDI1012-8 (TOLL) package. It features a drain-source voltage of 80V and a maximum continuous drain current of 270A at +25°C case temperature. The device exhibits a static drain-source on-resistance of 1.7mΩ max at VGS=10V. It supports a junction temperature range of -55°C to +175°C and includes wettable flank terminals for improved optical inspection.
Feature Summary
- Rated for operation up to +175°C junction temperature
- Manufactured with wettable flank technology for enhanced inspection reliability
- Qualified to AEC-Q101 standards with PPAP capability for automotive use
Applications
- Motor controls
- DC-DC converters
- Power management systems
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the Tape & Reel carrier configuration containing 1500 units per reel. Confirm that the required packaging quantity aligns with standard reel sizes. Ensure compliance with RoHS directives and halogen-free specifications as defined by the manufacturer's quality definitions before finalizing procurement orders.
Selection Notes
Select this component when high current handling and low conduction losses are critical within an 80V system. The POWERDI1012-8 package provides superior thermal dissipation compared to smaller footprints. Consider the +175°C rating for environments requiring robust thermal performance without excessive heatsinking requirements.
Part Context
This part belongs to the DMTH series of automotive-grade MOSFETs designed for high-power applications. It utilizes silicon technology optimized for low on-resistance and high switching efficiency. The TOLL form factor allows for compact PCB layouts while maintaining high current carrying capabilities suitable for demanding industrial and automotive loads.
Replacement Considerations
Consult official substitution lists for compatible parts within the same voltage and current ratings. Verify pinout compatibility and thermal resistance characteristics when replacing existing designs. Ensure any substitute maintains AEC-Q101 qualification if used in automotive contexts.
FAQ
What is the maximum pulsed drain current for this device?
The maximum pulsed drain current is 1080A, measured with a 10μs pulse duration and a duty cycle of 1%.
Is the device qualified for automotive applications?
Yes, the DMTH8001STLWQ is qualified to AEC-Q101 standards and is supported by a PPAP, making it suitable for automotive motor controls and power management.
