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Product Detailed Parameters
- Description：IC
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：80 V
- Current - Continuous Drain (Id) @ 25°C：100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：3.8mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：81 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：4979 pF @ 40 V
- FET Feature：-
- Power Dissipation (Max)：1.5W (Ta), 125W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount, Wettable Flank
- Supplier Device Package：PowerDI5060-8 (Type UX)
- Package / Case：8-PowerTDFN
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Overview
The DMTH8004LPSWQ-13 is an N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI5060-8/SWP package. It features an 80V drain-source breakdown voltage and a maximum continuous drain current of 100A at +25°C case temperature. The device offers a low on-resistance of 3.8mΩ at VGS=10V and 5.3mΩ at VGS=4.5V. It supports junction temperatures up to +175°C and includes AEC-Q101 qualification for automotive use.
Feature Summary
- Rated for operation in high ambient temperature environments up to +175°C
- Manufactured with 100% Unclamped Inductive Switching (UIS) testing for robustness
- Designed to minimize on-state losses while maintaining superior switching performance
- Qualified for automotive applications requiring specific change control
Applications
- DC-DC converters
- Load switches
- Power management circuits
Procurement Notes
Verify the complete part number including the -13 suffix for tape and reel packaging quantities. Confirm that the application environment aligns with the specified thermal resistance values and power dissipation limits under steady-state conditions. Ensure design compliance with RoHS directives and IATF 16949 manufacturing standards required for automotive integration.
Selection Notes
Select this component when high current handling near 100A is required within a compact surface-mount footprint. Consider the specific gate drive voltage requirements, as on-resistance varies significantly between 4.5V and 10V logic levels. Evaluate thermal management strategies carefully due to the package-limited current rating and reliance on exposed pad soldering for heat dissipation.
Part Context
This device belongs to the DMTH series of high-performance MOSFETs designed for efficiency. It utilizes silicon technology within the PowerDI® family, which provides enhanced thermal conductivity compared to standard plastic packages. The SWP variant indicates a specific lead frame configuration optimized for automated assembly and improved solder joint reliability.
Replacement Considerations
Consult official cross-reference lists for verified substitutes. Ensure any replacement maintains the 80V rating, similar RDS(ON) characteristics, and compatible PowerDI5060-8 pinout to avoid PCB layout modifications.
