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Product Detailed Parameters
- Description：MOSFET BVDSS: 61V~100V POWERDI33
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：80 V
- Current - Continuous Drain (Id) @ 25°C：17A (Ta), 70A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：6.9mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：37.7 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2254 pF @ 40 V
- FET Feature：-
- Power Dissipation (Max)：1.2W (Ta), 50W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：POWERDI3333-8
- Package / Case：8-PowerVDFN
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Overview
The DMTH8008LFG-13 is an N-channel enhancement mode MOSFET from Diodes Incorporated, rated for a drain-source voltage of 80V. It features a maximum on-resistance of 6.9mΩ at VGS=10V and 10.4mΩ at VGS=4.5V. The device supports continuous drain currents up to 70A at TC=+25°C and 17A at TA=+25°C. Operating temperatures range from -55°C to +175°C. It utilizes the PowerDI3333-8 package with a thermal resistance of 3°C/W junction-to-case.
Feature Summary
- Designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency power management.
- Rated to +175°C, making it suitable for high ambient temperature environments.
- Features excellent Qgd × RDS(ON) product (Figure of Merit) and advanced technology optimized for DC-DC converters.
- Small form factor thermally efficient package enables higher density end products.
Applications
- Backlighting
- Power-management functions
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the required tape and reel quantity of 3000 units. Confirm that the PowerDI3333-8 package dimensions align with your PCB footprint requirements. Ensure the component meets RoHS compliance standards if applicable to your manufacturing process. Cross-reference the datasheet revision number to ensure compatibility with your design specifications.
Selection Notes
Select this component when a compact N-channel MOSFET with low on-resistance is required for space-constrained designs. Consider its high thermal rating for applications operating in elevated ambient temperatures. Evaluate the gate charge characteristics against your driver capabilities to optimize switching speeds. Compare the package size benefits against alternative packages like SO-8 for board area reduction.
Part Context
This part belongs to the DMTH8008 series of N-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. It is designed specifically for high-efficiency power management applications where low conduction losses and fast switching are critical. The series offers various packaging options to suit different density and thermal requirements.
Replacement Considerations
DMTH8008LFGQ-13 is listed as a parameter-equivalent automotive-compliant alternative. Verify that the automotive qualification meets your specific application reliability standards before substitution.
FAQ
What is the maximum operating junction temperature?
The maximum operating junction temperature is +175°C.
Is the device qualified for automotive applications?
The standard DMTH8008LFG is not explicitly stated as automotive-qualified; however, an automotive-compliant version is available under the separate part number DMTH8008LFGQ.
