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Product Detailed Parameters
- Description：MOSFET BVDSS: 61V~100V POWERDI50
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：80 V
- Current - Continuous Drain (Id) @ 25°C：91A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：7.8mOhm @ 14A, 10V
- Vgs(th) (Max) @ Id：2.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：41.2 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2345 pF @ 40 V
- FET Feature：-
- Power Dissipation (Max)：1.6W (Ta), 100W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount, Wettable Flank
- Supplier Device Package：PowerDI5060-8 (Type UX)
- Package / Case：8-PowerTDFN
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Overview
The DMTH8008LPSWQ-13 is an N-channel enhancement mode MOSFET rated for a drain-source voltage of 80V. It features a maximum on-resistance of 7.8mΩ at VGS=10V and 11mΩ at VGS=4.5V, supporting continuous drain currents of 91A at TC=25°C and 64A at TC=100°C. The device operates within a junction temperature range of -55°C to +175°C and utilizes the PowerDI5060-8/SWP package.
Feature Summary
- Qualified to AEC-Q101 standards with PPAP capability for automotive applications
- Rated for operation up to +175°C junction temperature
- 100% unclamped inductive switching (UIS) tested in production
Applications
- DC-DC converters
- Load switches
Procurement Notes
Verify the specific ordering suffix matches the required packing quantity and carrier type. Confirm that the component meets all applicable RoHS directives and environmental compliance requirements relevant to your region. Ensure the manufacturing facility holds IATF 16949 certification if automotive change control protocols are mandated by your supply chain specifications.
Selection Notes
Select this component when high ambient temperature tolerance and robust inductive switching reliability are critical design parameters. The low on-resistance characteristics support efficient power conversion in compact form factors. Verify that the thermal management strategy aligns with the specified thermal resistance values for both case-mounted and ambient-referenced operating conditions.
Part Context
This part belongs to Diodes Incorporated's automotive-grade MOSFET portfolio designed for stringent reliability standards. It is manufactured in IATF 16949 certified facilities to ensure consistent quality for automotive electronics. The PowerDI5060-8 package provides a balance of current handling capability and board space efficiency for modern power management designs.
Replacement Considerations
Consult official substitution lists for verified alternatives. Do not assume pin compatibility or electrical equivalence with other packages without datasheet confirmation.
