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Product Detailed Parameters
- Description：IC
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：80 V
- Current - Continuous Drain (Id) @ 25°C：6.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：25mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：10.4 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：641 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：1.5W (Ta)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount, Wettable Flank
- Supplier Device Package：U-DFN2020-6 (SWP) (Type UXG)
- Package / Case：6-UDFN Exposed Pad
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Overview
The DMTH8030LFDFWQ-7 is an N-channel enhancement mode MOSFET rated for a drain-source voltage of 80V. It features a maximum on-resistance of 25mΩ at VGS=10V and 38mΩ at VGS=4.5V, with continuous drain currents of 6.5A at 25°C and 5.5A at 4.5V gate drive. The device operates within a temperature range of -55°C to +175°C and utilizes a U-DFN2020-6/SWP package.
Feature Summary
- Rated for operation in high ambient temperature environments up to +175°C
- Features a low profile construction with a 0.6mm height
- Manufactured in IATF 16949 certified facilities and suitable for automotive applications requiring specific change control
- Totally lead-free, fully RoHS compliant, and halogen and antimony free
Applications
- Power-management functions
- Battery operated systems
- Solid-state relays
- Drivers for relays, solenoids, lamps, hammers, displays, memories, and transistors
Procurement Notes
Verify the exact ordering suffix against official Diodes Incorporated documentation before procurement. Confirm that the required packing quantity matches the available reel options, such as 3,000 or 10,000 units per carrier. Ensure compliance with AEC-Q101 qualification requirements if the application demands automotive-grade specifications and PPAP capability.
Selection Notes
Select this component when designing circuits requiring robust performance in high-temperature conditions up to 175°C. The low on-resistance characteristics make it suitable for high-efficiency power management applications. Verify that the PCB layout accommodates the U-DFN2020-6/SWP footprint and meets the recommended pad dimensions for optimal thermal dissipation.
Part Context
This part belongs to the DMTH series of N-channel enhancement mode MOSFETs from Diodes Incorporated. These devices are engineered to minimize on-state resistance while maintaining superior switching performance. The series is designed for use in compact, high-efficiency power management solutions across various industrial and consumer electronics applications.
Replacement Considerations
Consult official Diodes Incorporated substitution guides for verified alternatives. Cross-reference electrical parameters such as BVDSS, RDS(ON), and package dimensions to ensure compatibility.
