DMTH82M6SPSWQ-13

$0.92

Description：IC
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:fc36dd6deb9e Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：IC
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：80 V
Current - Continuous Drain (Id) @ 25°C：174A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
Rds On (Max) @ Id, Vgs：2.6mOhm @ 30A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：87 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：5466 pF @ 40 V
FET Feature：-
Power Dissipation (Max)：4.1W (Ta), 150W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI5060-8 (Type UX)
Package / Case：8-PowerTDFN

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DMTH82M6SPSWQ-13

Overview

The DMTH82M6SPSWQ is an N-Channel Enhancement Mode MOSFET designed for high-efficiency power management. It features a maximum drain-source voltage (BVDSS) of 80V and a low on-resistance (RDS(ON)) of 2.6mΩ at VGS=10V, supporting a continuous drain current (ID) of 174A at TC=+25°C. The device operates within a junction temperature range of -55°C to +175°C and utilizes the PowerDI5060-8/SWP package.

Feature Summary

Engineered for minimized on-state losses while maintaining superior switching performance.
Validated for reliability through 100% Unclamped Inductive Switching (UIS) testing in production.
Suitable for automotive applications requiring specific change control with AEC-Q101 qualification and IATF 16949 manufacturing certification.

Applications

Engine-management systems
Body control electronics
DC-DC converters

Procurement Notes

Verify the complete part number including the suffix '-13' for tape and reel packaging quantities. Confirm RoHS compliance and halogen-free status requirements against project specifications. Ensure design accounts for thermal resistance characteristics under intended mounting conditions. Validate that the selected component meets all functional safety standards required for the target application environment.

Selection Notes

Select this component for applications requiring high current handling in compact surface-mount footprints. Consider the low gate charge and fast switching speeds for efficient DC-DC conversion designs. Evaluate thermal dissipation capabilities based on the specific PCB copper area and ambient operating temperatures to ensure reliable operation within the specified junction temperature limits.

Part Context

This device belongs to Diodes Incorporated's generation of N-Channel Enhancement Mode MOSFETs optimized for automotive and industrial power management. It integrates robust avalanche energy ratings and low input capacitance into the PowerDI5060-8 package, providing a balance of high current capacity and thermal efficiency for space-constrained electronic designs.

Replacement Considerations

Consult official manufacturer documentation for verified substitute part numbers. Do not assume cross-compatibility with other series without validating pin configurations, electrical parameters, and package dimensions against the original datasheet specifications.

FAQ

Is the DMTH82M6SPSWQ qualified for automotive applications?

Yes, the device is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities, making it suitable for automotive applications requiring specific change control.