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Product Detailed Parameters
- Description：SICFET N-CH 1200V TO-247
- Series：-
- Mfr：Diodes Incorporated
- Package：Tube
- FET Type：N-Channel
- Technology：SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss)：1200 V
- Current - Continuous Drain (Id) @ 25°C：100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：15V
- Rds On (Max) @ Id, Vgs：28.5mOhm @ 50A, 15V
- Vgs(th) (Max) @ Id：3.6V @ 17.7mA
- Gate Charge (Qg) (Max) @ Vgs：173.7 nC @ 15 V
- Vgs (Max)：+19V, -8V
- Input Capacitance (Ciss) (Max) @ Vds：3944 pF @ 1000 V
- FET Feature：-
- Power Dissipation (Max)：429W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-247-4
- Package / Case：TO-247-4
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Overview
The DMWSH120H28SM4 is a 1200V N-channel Silicon Carbide (SiC) power MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage of 1200V and a continuous drain current of 100A at 25°C case temperature. The device exhibits a typical static on-resistance of 20mΩ, with a maximum rating of 28.5mΩ at VGS=15V and ID=50A. Key electrical parameters include a gate threshold voltage ranging from 1.8V to 3.6V, total gate charge of 173.7nC, and input capacitance of 3944pF. Thermal characteristics specify a junction-to-case thermal resistance of 0.35°C/W and an operating temperature range from -55°C to +175°C.
Feature Summary
- Designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency applications.
- Features low input capacitance and low on-resistance to reduce switching losses and improve system efficiency.
- Includes a Kelvin source pin in the TO247-4 package to optimize switching performance.
Applications
- EV high-power DC-DC converters
- EV charging systems
- AC-DC traction inverters
- Automotive motor drivers
Procurement Notes
Verify component authenticity through authorized distribution channels. Confirm RoHS compliance and Halogen-free status against specific regulatory requirements. Ensure ordering suffixes match exact packaging specifications. Validate datasheet revision numbers during procurement to ensure alignment with latest technical parameters.
Selection Notes
Select this component for designs requiring high-voltage handling and low conduction losses. Evaluate thermal management capabilities based on the specified junction-to-case resistance. Consider the Kelvin source connection for accurate gate drive control. Verify that the application environment falls within the specified -55°C to +175°C operating temperature range.
Part Context
This part belongs to the DMWSH120H series of 1200V N-channel SiC MOSFETs from Diodes Incorporated. The series targets industrial and automotive power electronics demanding high power density. The TO247-4 package provides robust mechanical stability and efficient heat dissipation for through-hole mounting.
Replacement Considerations
An automotive-compliant version is available under the separate datasheet for part number DMWSH120H28SM4Q. Verify functional equivalence and package compatibility before substitution.
