DMWSH120H28SM4Q

$28.04

Description：SICFET N-CH 1200V TO-247
Series：-
Mfr：Diodes Incorporated
Package：Tube

SKU:8cfddd858a4e Category: Single FETs, MOSFETs Brand: Diodes Incorporated

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：SICFET N-CH 1200V TO-247
Series：-
Mfr：Diodes Incorporated
Package：Tube
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：1200 V
Current - Continuous Drain (Id) @ 25°C：100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：15V
Rds On (Max) @ Id, Vgs：28.5mOhm @ 50A, 15V
Vgs(th) (Max) @ Id：3.6V @ 17.7mA
Gate Charge (Qg) (Max) @ Vgs：156.3 nC @ 15 V
Vgs (Max)：+19V, -8V
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：429W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Through Hole
Supplier Device Package：TO-247-4
Package / Case：TO-247-4

Download product information

DMWSH120H28SM4Q

Overview

The DMWSH120H28SM4Q is a 1200V N-channel Silicon Carbide (SiC) power MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage of 1200V and a continuous drain current of 100A at 25°C case temperature. The device exhibits a typical on-resistance of 20mΩ and a maximum of 28.5mΩ at VGS=15V and ID=50A. Total gate charge is typically 173.7nC, with turn-on and turn-off switching energies of 744µJ and 367µJ respectively under specified test conditions. It operates within a junction temperature range of -55°C to +175°C.

Feature Summary

Designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency applications.
Qualified for automotive applications requiring specific change control, including AEC-Q101 qualification and PPAP capability.
Manufactured in IATF 16949 certified facilities with lead-free finish and compliance with RoHS directives.
Features low input capacitance and a high breakdown voltage rating suitable for demanding power applications.

Applications

EV high-power DC-DC converters
EV charging systems
AC-DC traction inverters
Automotive motor drivers

Procurement Notes

Verify the complete part number DMWSH120H28SM4Q against official Diodes Incorporated documentation to ensure correct specifications. Confirm that the TO247-4 package and standard tube packing quantity align with your assembly requirements. Cross-reference datasheet revision DS45710 Rev. 6 for the most current electrical characteristics and mechanical dimensions before finalizing procurement.

Selection Notes

Select this component when designing circuits requiring high-voltage handling up to 1200V with low conduction losses. Ensure the thermal management system can handle the specified power dissipation and thermal resistance values. Verify that the gate drive voltage supports the 15V requirement for optimal on-resistance performance. Consider the AEC-Q101 qualification if the application demands automotive-grade reliability standards.

Part Context

This device belongs to the DMWSH120H series of 1200V N-channel SiC MOSFETs from Diodes Incorporated. The series is engineered to balance low on-resistance with fast switching capabilities. The TO247-4 package provides robust mechanical stability and efficient heat dissipation for through-hole mounting configurations commonly used in industrial and automotive power modules.

Replacement Considerations

Consult the manufacturer's official documentation for verified substitute part numbers. Do not assume cross-compatibility with other brands or different pinouts without explicit confirmation from the datasheet.

FAQ

Is the DMWSH120H28SM4Q qualified for automotive use?

Yes, the device is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities, making it suitable for automotive applications requiring specific change control.