DMWSH120H43SM4Q

$12.08

Description：SICFET N-CH 1200V TO-247
Series：-
Mfr：Diodes Incorporated
Package：Tube

SKU:8c0e7559fa56 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：SICFET N-CH 1200V TO-247
Series：-
Mfr：Diodes Incorporated
Package：Tube
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：1200 V
Current - Continuous Drain (Id) @ 25°C：70.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：15V
Rds On (Max) @ Id, Vgs：43mOhm @ 40A, 15V
Vgs(th) (Max) @ Id：3.6V @ 11.5mA
Gate Charge (Qg) (Max) @ Vgs：114 nC @ 15 V
Vgs (Max)：+19V, -8V
Input Capacitance (Ciss) (Max) @ Vds：2204 pF @ 1000 V
FET Feature：-
Power Dissipation (Max)：320W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Through Hole
Supplier Device Package：TO-247-4
Package / Case：TO-247-4

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DMWSH120H43SM4Q

Overview

The DMWSH120H43SM4Q is a 1200V N-channel Silicon Carbide (SiC) power MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage of 1200V and a continuous drain current of 70.5A at +25°C. The device exhibits a typical on-resistance of 33mΩ and a maximum of 43mΩ at VGS=15V. Operating within a junction temperature range of -55°C to +175°C, it utilizes a TO247-4 package with a thermal resistance from junction to case of 0.47°C/W.

Feature Summary

Designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency applications.
Features low input capacitance and a high BVDSS rating suitable for demanding power applications.
Includes a Kelvin source pin in the TO247-4 package to optimize switching efficiency and reduce parasitic effects.

Applications

EV high-power DC-DC converters
EV charging systems
AC-DC traction inverters
Solar inverters
Automotive motor drivers

Procurement Notes

Verify component authenticity through authorized channels. Confirm AEC-Q101 qualification status and IATF 16949 manufacturing compliance for automotive requirements. Ensure RoHS 3 and halogen-free specifications match project constraints. Validate datasheet revision DS46268 Rev. 3-2 against final design specifications before integration.

Selection Notes

Select this component for designs requiring high-voltage handling and low conduction losses. Evaluate thermal management capabilities based on the 0.47°C/W junction-to-case resistance. Consider gate drive requirements aligned with the recommended ±15V/-4V operating values. Assess system efficiency needs against the documented dynamic characteristics and stored energy parameters.

Part Context

This part belongs to the DMWSH120H series of 1200V N-channel SiC MOSFETs from Diodes Incorporated. The series targets industrial and automotive sectors demanding high power density. The specific model integrates advanced silicon carbide technology to outperform traditional silicon devices in high-frequency and high-temperature environments.

Replacement Considerations

Cross-reference with other Diodes Incorporated models in the DMWSH120H family for alternative current or resistance ratings. Verify pinout compatibility when substituting with similar TO247-4 packages from other manufacturers. Ensure equivalent thermal and electrical characteristics are maintained during replacement.

FAQ

What is the purpose of the fourth pin in the TO247-4 package?

The fourth pin serves as a Kelvin source connection, allowing the driver to sense the source potential directly at the die to optimize switching performance.