DMWSH120H80SM4

Overview

The DMWSH120H80SM4 is a silicon carbide MOSFET manufactured by Diodes Incorporated. It features an N-channel configuration housed in a TO-247-4 package. The device supports a drain-source breakdown voltage exceeding 1000V and operates with a continuous drain current of 30A. It utilizes through-hole mounting technology and is supplied in tubes containing 30 pieces per factory pack.

Feature Summary

• Utilizes silicon carbide semiconductor technology for high-performance power switching
• Designed to minimize on-resistance while maintaining efficient switching characteristics
• Features an enhancement mode single-channel N-configuration

Applications

• High-voltage power conversion systems
• Industrial motor drive applications
• Uninterruptible power supply units

Procurement Notes

Verify the specific suffix and package variant against official Diodes Incorporated documentation before procurement. Confirm that the TO-247-4 pinout matches the target circuit design requirements. Ensure compliance with RoHS directives and check for any regional sales restrictions or limited availability status directly from authorized distributors prior to ordering.

Selection Notes

Select this component when designing circuits requiring robust high-voltage handling capabilities with moderate current ratings. The TO-247-4 package facilitates effective thermal management for through-hole implementations. Evaluate the trade-off between the specified 30A continuous current rating and the required thermal dissipation constraints within the final enclosure design to ensure reliable operation under load.

Part Context

This part belongs to the DMWSH120H series of 1200V N-channel SiC MOSFETs from Diodes Incorporated. The series is engineered to optimize conduction losses without compromising switching speed. The DMWSH120H80SM4 represents a specific current-rated variant within this lineup, distinguished by its 30A capacity and four-terminal TO-247-4 footprint for enhanced thermal performance.