DMWSH120H90SCT7Q-13

$4.88

Description：SICFET N-CH 1200V TO-247
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:f9a2cebaf9c2 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：SICFET N-CH 1200V TO-247
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：1200 V
Current - Continuous Drain (Id) @ 25°C：38.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：15V
Rds On (Max) @ Id, Vgs：90mOhm @ 20A, 15V
Vgs(th) (Max) @ Id：3.5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs：54.6 nC @ 15 V
Vgs (Max)：+19V, -8V
Input Capacitance (Ciss) (Max) @ Vds：1078 pF @ 1000 V
FET Feature：-
Power Dissipation (Max)：197W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：TO-263-7
Package / Case：TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

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DMWSH120H90SCT7Q-13

Overview

The DMWSH120H90SCT7Q-13 is a silicon carbide (SiC) MOSFET manufactured by Diodes Incorporated. It features an N-channel configuration with a drain-source breakdown voltage of 1200 V and a continuous drain current of 38.2 A at case temperature. The device exhibits a maximum on-resistance of 90 mOhms. It is housed in a surface-mount TO-263-7 package, designed for high thermal efficiency and robust performance in power conversion applications.

Feature Summary

Utilizes silicon carbide technology to achieve low conduction losses and high thermal stability.
Optimized for high-frequency switching operations with fast transition times.
Designed with enhanced ruggedness to withstand short-circuit conditions.

Applications

High-efficiency DC-DC converters
Industrial motor drives
Uninterruptible power supplies

Procurement Notes

Verify the specific suffix 'T7Q-13' against official Diodes Incorporated documentation to confirm tape-and-reel packaging and automotive-grade qualification status. Ensure compatibility with TO-263-7 footprints during PCB layout. Cross-reference datasheet revisions to validate electrical parameters before finalizing procurement specifications.

Selection Notes

Select this component for designs requiring high-voltage handling with minimal conduction loss. Evaluate thermal management requirements based on the 197 W power dissipation rating. Compare gate charge characteristics against available drivers to optimize switching speed and minimize electromagnetic interference in the target circuit topology.

Part Context

This part belongs to the DMWSH120H series of 1200 V SiC MOSFETs from Diodes Incorporated. The series is engineered for next-generation power electronics, offering superior performance over traditional silicon devices. The specific model integrates advanced cell technology to reduce figure-of-merit values, supporting compact and efficient power system designs.

Replacement Considerations

Consult official substitution guides for compatible alternatives within the same voltage and current class. Verify pinout compatibility and thermal resistance specifications when considering cross-manufacturer replacements to ensure seamless integration without redesigning the cooling infrastructure.