ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：SICFET N-CH 1200V TO-247
- Series：-
- Mfr：Diodes Incorporated
- Package：Tube
- FET Type：N-Channel
- Technology：SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss)：1200 V
- Current - Continuous Drain (Id) @ 25°C：38.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：15V
- Rds On (Max) @ Id, Vgs：90mOhm @ 20A, 15V
- Vgs(th) (Max) @ Id：3.5V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs：54.6 nC @ 15 V
- Vgs (Max)：+19V, -8V
- Input Capacitance (Ciss) (Max) @ Vds：1078 pF @ 1000 V
- FET Feature：-
- Power Dissipation (Max)：197W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：TO-263-7
- Package / Case：TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Download product information
Overview
The DMWSH120H90SCT7Q is a silicon carbide (SiC) MOSFET manufactured by Diodes Incorporated. It features an N-channel configuration housed in a TO-263-7 surface-mount package. The device supports a drain-source breakdown voltage of 1200 V and a continuous drain current of 38.2 A at case temperature. Key electrical parameters include a maximum on-resistance of 90 mΩ, a gate-source voltage range of -4 V to +15 V, and a threshold voltage of 3.5 V. The component operates within a junction temperature range of -55°C to +175°C with a power dissipation rating of 197 W.
Feature Summary
- Utilizes silicon carbide technology for high thermal stability and efficiency
- Designed for low conduction losses with optimized on-resistance characteristics
- Engineered for fast switching performance suitable for high-frequency applications
Applications
- High-efficiency power supply designs
- Industrial motor drive systems
- Uninterruptible power supply units
Procurement Notes
Verify the specific suffix CT7Q confirms the tape-and-reel packaging format required for automated assembly processes. Confirm RoHS compliance status through official manufacturer documentation prior to integration. Ensure the TO-263-7 footprint matches the target PCB layout specifications exactly to prevent mechanical interference.
Selection Notes
Select this component when a surface-mount SiC solution is required for 1200 V applications. Compare the 90 mΩ on-resistance against system thermal constraints to determine heatsinking requirements. Evaluate the 38.2 A current rating against peak load demands to ensure adequate safety margins during operation.
Part Context
This part belongs to the DMWSH120H series of 1200 V N-channel SiC MOSFETs from Diodes Incorporated. The series offers various packages including TO-247 and TO-263 variants with different resistance grades. This specific model targets surface-mount implementations requiring robust high-voltage switching capabilities.
Replacement Considerations
Cross-reference with other DMWSH120H series parts such as DMWSH120H90SM4Q for pin-compatible alternatives if through-hole mounting is preferred. Verify that any substitute maintains the same 1200 V rating and comparable on-resistance values.
