DMWSH120H90SM3

$9.27

Description：SICFET N-CH 1200V TO-247
Series：-
Mfr：Diodes Incorporated
Package：Tube

SKU:bad1e8973d06 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：SICFET N-CH 1200V TO-247
Series：-
Mfr：Diodes Incorporated
Package：Tube
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：1200 V
Current - Continuous Drain (Id) @ 25°C：41A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：15V
Rds On (Max) @ Id, Vgs：97.5mOhm @ 20A, 15V
Vgs(th) (Max) @ Id：3.5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs：50.9 nC @ 15 V
Vgs (Max)：+19V, -8V
Input Capacitance (Ciss) (Max) @ Vds：1090 pF @ 1000 V
FET Feature：-
Power Dissipation (Max)：246W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247
Package / Case：TO-247-3

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DMWSH120H90SM3

Overview

The DMWSH120H90SM3 is a 1200V N-channel Silicon Carbide (SiC) power MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage of 1200V and a typical on-resistance of 75mΩ at VGS=15V, with a maximum rating of 97.5mΩ. The device supports a continuous drain current of 41A at TC=+25°C and 29A at TC=+100°C. Total power dissipation reaches 246W at TC=+25°C. Operating junction temperature ranges from -55°C to +175°C. Thermal resistance from junction to case is 0.61°C/W. Gate threshold voltage typically measures 2.5V.

Feature Summary

Designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency applications.
Features low input capacitance and a high breakdown voltage rating suitable for demanding power environments.
Constructed with a molded plastic package using a green molding compound that is halogen and antimony free.

Applications

EV high-power DC-DC converters
EV charging systems
AC-DC traction inverters
Automotive motor drivers

Procurement Notes

Verify the specific part number against official manufacturer documentation to ensure correct component identification. Confirm that the required electrical parameters align with your system design specifications before procurement. Check for automotive-compliant variants if AEC-Q101 qualification is necessary for your application. Ensure compatibility with standard TO247 mounting requirements.

Selection Notes

Select this component when designing circuits requiring high-voltage handling and low conduction losses. Evaluate thermal management strategies based on the specified junction-to-case thermal resistance. Consider gate drive requirements relative to the static and dynamic gate-source voltage limits. Assess switching energy characteristics to optimize overall system efficiency in high-frequency operation.

Part Context

This device belongs to the SiC MOSFET product category within Diodes Incorporated's portfolio. It utilizes silicon carbide technology to achieve higher performance compared to traditional silicon devices. The component is housed in a TO247 standard package, facilitating through-hole mounting. It serves as a non-automotive grade alternative to the DMWSH120H90SM3Q variant.

Replacement Considerations

An automotive-compliant version is available under the separate datasheet for the part number DMWSH120H90SM3Q. Verify pinout compatibility and thermal characteristics when substituting other 1200V SiC MOSFETs in the TO247 package family.