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Product Detailed Parameters
- Description：SICFET N-CH 1200V TO-247
- Series：-
- Mfr：Diodes Incorporated
- Package：Tube
- FET Type：N-Channel
- Technology：SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss)：1200 V
- Current - Continuous Drain (Id) @ 25°C：41A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：15V
- Rds On (Max) @ Id, Vgs：97.5mOhm @ 20A, 15V
- Vgs(th) (Max) @ Id：3.5V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs：50.9 nC @ 15 V
- Vgs (Max)：+19V, -8V
- Input Capacitance (Ciss) (Max) @ Vds：1090 pF @ 1000 V
- FET Feature：-
- Power Dissipation (Max)：246W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Through Hole
- Supplier Device Package：TO-247
- Package / Case：TO-247-3
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Overview
The DMWSH120H90SM3Q is a 1200V N-channel Silicon Carbide (SiC) power MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source breakdown voltage of 1200V and a static drain-source on-resistance of 97.5mΩ at VGS = 15V. The device supports a continuous drain current of 41A at TC = +25°C and operates within a junction temperature range of -55°C to +175°C. Packaged in a TO-247 standard housing, it is designed for high-efficiency power management applications requiring low on-state resistance and superior switching performance.
Feature Summary
- Designed to minimize on-state resistance while maintaining superior switching performance
- Suitable for automotive applications with AEC-Q101 qualification and PPAP capability
- Manufactured in IATF 16949 certified facilities
- Features lead-free finish, RoHS compliance, and halogen/antimony-free green packaging
Applications
- EV high-power DC-DC converters
- EV charging systems
- AC-DC traction inverters
- Automotive motor drivers
Procurement Notes
Verify the specific ordering suffix 'SM3Q' against official Diodes Incorporated documentation to confirm package type, packing quantity, and automotive qualification status. Ensure that the required gate drive voltages align with the specified static limits of +15V/-4V and dynamic limits of +19V/-8V. Confirm thermal management requirements based on the specified thermal resistance values for your intended operating conditions.
Selection Notes
Select this component when designing circuits requiring high-voltage handling up to 1200V with optimized conduction losses. Consider the 97.5mΩ on-resistance for efficiency calculations at 15V gate drive. Evaluate the thermal characteristics, specifically the junction-to-case resistance, to ensure adequate heatsinking for the target power dissipation levels. Verify compatibility with the TO-247 footprint during PCB layout.
Part Context
This part belongs to the DMWSH120H series of 1200V N-channel SiC MOSFETs from Diodes Incorporated. The series is engineered to balance low on-resistance with robust switching capabilities. The 'SM3Q' designation indicates specific packaging and automotive-grade qualification attributes distinct from other variants in the broader product family.
Replacement Considerations
Consult the official datasheet or manufacturer for confirmed substitute part numbers. Cross-referencing requires matching critical parameters such as BVDSS, RDS(ON), package type, and thermal ratings.
