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The DN0150BDJ-7 is a dual NPN surface mount transistor manufactured by Diodes Incorporated. It utilizes epitaxial planar die construction and is housed in an SOT-963 package. The device features a collector-emitter voltage (VCEO) of 50 V, a collector-base voltage (VCBO) of 60 V, and an emitter-base voltage (VEBO) of 5 V. Continuous collector current is rated at 100 mA with a power dissipation of 300 mW. DC current gain ranges from 200 to 400 at IC = 2 mA and VCE = 6 V. The transition frequency is 60 MHz. Operating temperature spans -55°C to +150°C.
This component is officially marked as obsolete and discontinued by the manufacturer. Verify availability through authorized distributors or secondary markets. Confirm that replacement parts meet all original electrical specifications and mechanical dimensions before integration into existing designs.
Select this part only if legacy compatibility is required. Evaluate alternative components such as the DST847BDJ series for new designs. Ensure thermal management supports the specified junction-to-ambient resistance. Validate that the SOT-963 footprint matches the target PCB layout constraints.
The DN0150BDJ-7 belongs to the DN0150 family of dual NPN transistors. It shares the same package and general characteristics as the DN0150ADJ variant, differing primarily in DC current gain specifications. Both variants are discontinued products within the Diodes Incorporated portfolio.
The datasheet explicitly recommends using the DST847BDJ as a substitute part number.
The maximum collector-emitter saturation voltage is 0.25 V when IC = 100 mA and IB = 10 mA.
No, the device has a Moisture Sensitivity Level of 1 per J-STD-020D.
The typical output capacitance (Cob) is 1.3 pF measured at VCB = 10 V, IE = 0, and f = 1 MHz.