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Product Detailed Parameters
- Description：MOSFET N-CH 500V 230MA TO243AA
- Series：-
- Mfr：Microchip Technology
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel, Depletion Mode
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：500 V
- Current - Continuous Drain (Id) @ 25°C：230mA (Tj)
- Drive Voltage (Max Rds On, Min Rds On)：0V
- Rds On (Max) @ Id, Vgs：10Ohm @ 300mA, 0V
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：200 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：1.6W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-243AA (SOT-89)
- Package / Case：TO-243AA
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Overview
The DN2450N8-G is an N-Channel, Depletion-Mode Vertical DMOS FET manufactured by Microchip Technology. It features a TO-243AA (SOT-89) surface-mount package and utilizes a silicon-gate manufacturing process. The device provides high-input impedance, low input capacitance, and fast switching speeds. Key electrical specifications include a drain-to-source breakdown voltage of 500 V, a maximum static on-resistance of 10 Ω at zero gate bias, and a saturated drain current of 700 mA. It operates within a temperature range of -55°C to +150°C.
Feature Summary
- Depletion-mode normally-on operation with low threshold voltage
- Vertical DMOS structure providing high power-handling capabilities
- Free from thermal runaway and secondary breakdown
- Positive-temperature coefficient inherent in MOS devices
Applications
- Normally-on switches
- Battery operated systems
- Voltage to current converters
- Constant current sources
- Current and voltage limiters
Procurement Notes
Verify the specific suffix 'N8' corresponds to the TO-243AA (SOT-89) package configuration required for your design. Confirm that the depletion-mode characteristic aligns with your circuit's logic requirements, as this device conducts when the gate-source voltage is zero. Ensure environmental compliance matches project standards, noting the 'G' designation indicates lead-free and RoHS-compliant packaging.
Selection Notes
Select the DN2450N8-G for applications requiring a normally-on switch or constant current source where high input impedance is critical. Consider the TO-243AA package thermal resistance of 133°C/W for heat dissipation calculations. Evaluate the 500 V breakdown voltage against peak transient voltages in the system. Verify that the 10 Ω on-resistance meets the conduction loss requirements at the intended operating current levels.
Part Context
This component belongs to the DN2450 family of vertical DMOS field-effect transistors produced by Microchip Technology. The family includes variants such as the DN2450K4-G, which shares similar electrical characteristics but utilizes a TO-252 (D-Pak) package. These devices are designed for switching and amplifying applications demanding high breakdown voltage and fast switching speeds.
Replacement Considerations
DN2450K4-G: Alternative package variant using TO-252 (D-Pak).
FAQ
What is the default state of the DN2450N8-G?
The DN2450N8-G is a depletion-mode device, meaning it is a normally-on transistor that conducts current between the drain and source when the gate-to-source voltage is zero.
How does the DN2450N8-G handle thermal stress?
The device is free from thermal runaway and thermally-induced secondary breakdown due to the positive-temperature coefficient inherent in its Metal-Oxide Semiconductor structure.
