DN2530N3-G

$0.67

Description：MOSFET N-CH 300V 175MA TO92
Series：-
Mfr：Microchip Technology
Package：Bag

SKU:89f920b21883 Category: Single FETs, MOSFETs Brand: Microchip Technology

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 300V 175MA TO92
Series：-
Mfr：Microchip Technology
Package：Bag
FET Type：N-Channel, Depletion Mode
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：300 V
Current - Continuous Drain (Id) @ 25°C：175mA (Tj)
Drive Voltage (Max Rds On, Min Rds On)：0V
Rds On (Max) @ Id, Vgs：12Ohm @ 150mA, 0V
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：300 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：740mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-92 (TO-226)
Package / Case：TO-226-3, TO-92-3 (TO-226AA)

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DN2530N3-G

Overview

The DN2530N3-G is an N-Channel, Depletion-Mode, Vertical DMOS FET manufactured by Microchip Technology. It features a TO-92 package with a drain-to-source breakdown voltage (BVDSX) of 300 V and a maximum static on-resistance (RDS(ON)) of 12 Ω at ID=150 mA. The device supports a saturated drain current (IDSS) of 200 mA at VGS=0V. Operating temperature ranges from -55°C to +150°C. Power dissipation in the TO-92 package is 740 mW at 25°C ambient.

Feature Summary

Utilizes advanced vertical DMOS structure for high power handling combined with MOS high-input impedance.
Inherently free from thermal runaway and thermally-induced secondary breakdown due to positive-temperature coefficient.
Designed for fast switching speeds with low input capacitance and low leakage currents.

Applications

Normally-on switches
Solid state relays
Linear amplifiers
Constant current sources
Power supply circuits

Procurement Notes

Verify the specific ordering suffix 'N3' corresponds to the TO-92 package configuration as defined in the product identification system. Confirm that the 'G' suffix indicates lead-free/ROHS-compliant packaging. Ensure the procurement documentation references datasheet DS20005451A for accurate electrical specifications and absolute maximum ratings prior to integration.

Selection Notes

Select this component for applications requiring normally-on behavior with high breakdown voltage capabilities. The TO-92 package limits continuous power dissipation to 740 mW, making it suitable for low-power switching or linear regulation tasks. Consider the 12 Ω on-resistance when calculating conduction losses at the target operating current of 150 mA.

Part Context

This part belongs to the DN2530 family of Vertical DMOS Field-Effect Transistors. The 'N3' designation specifically identifies the 3-lead TO-92 through-hole package variant. Other variants in the series include the TO-243AA (SOT-89) package, which offers higher power dissipation capabilities but requires surface mount assembly.