DN2535N3-G-P013

$0.57

Description：MOSFET N-CH 350V 120MA TO92
Series：-
Mfr：Microchip Technology
Package：Tape & Box (TB)

SKU:42921830dde1 Category: Single FETs, MOSFETs Brand: Microchip Technology

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 350V 120MA TO92
Series：-
Mfr：Microchip Technology
Package：Tape & Box (TB)
FET Type：N-Channel, Depletion Mode
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：350 V
Current - Continuous Drain (Id) @ 25°C：120mA (Tj)
Drive Voltage (Max Rds On, Min Rds On)：0V
Rds On (Max) @ Id, Vgs：25Ohm @ 120mA, 0V
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：300 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：1W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-92 (TO-226)
Package / Case：TO-226-3, TO-92-3 (TO-226AA)

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DN2535N3-G-P013

Overview

The DN2535N3-G-P013 is a single N-channel depletion-mode vertical DMOS field-effect transistor manufactured by Microchip Technology. It utilizes silicon technology and is housed in a TO-92-3 through-hole package. Key electrical specifications include a drain-source breakdown voltage (Vds) of 350 V, a continuous drain current (Id) of 120 mA, and a maximum on-resistance (Rds(on)) of 25 Ohms. The device operates with a gate-source voltage range of -20 V to +20 V and supports a power dissipation of 1 W. It functions within an ambient temperature range of -55°C to +150°C.

Feature Summary

Vertical DMOS structure providing high input impedance and positive temperature coefficient characteristics.

Applications

Procurement Notes

Verify the specific suffix P013 against official Microchip documentation to confirm packaging details such as cut tape or reel configuration. Confirm availability status as distribution channels may list this component as obsolete or discontinued. Ensure the TO-92-3 package variant matches the required mechanical constraints for the target PCB layout.

Selection Notes

Select this component for applications requiring a normally-on N-channel switch with moderate voltage blocking capabilities. The 350 V rating suits high-voltage signal switching where low current handling is sufficient. Consider the depletion mode operation which requires negative gate bias to turn off, differing from standard enhancement-mode MOSFETs.

Part Context

This part belongs to the DN series of N-channel depletion-mode MOSFETs from Microchip Technology. These devices are designed for high-voltage switching applications, combining the power handling of bipolar transistors with the high input impedance of MOS structures. The TO-92-3 package indicates a small form factor suitable for through-hole mounting in compact designs.

Replacement Considerations

Publicly confirmed substitute part numbers for DN2535N3-G-P013 were not found in the provided source material. Verify compatibility with similar DN-series variants like DN2535N3-GP005 only if datasheet parameters match exactly.