ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N-CH 350V 120MA TO92
- Series：-
- Mfr：Microchip Technology
- Package：Bag
- FET Type：N-Channel, Depletion Mode
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：350 V
- Current - Continuous Drain (Id) @ 25°C：120mA (Tj)
- Drive Voltage (Max Rds On, Min Rds On)：0V
- Rds On (Max) @ Id, Vgs：25Ohm @ 120mA, 0V
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：300 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：1W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-92 (TO-226)
- Package / Case：TO-226-3, TO-92-3 (TO-226AA)
Download product information
Overview
The DN2535N3-G is an N-Channel Depletion-mode Vertical DMOS FET manufactured by Microchip Technology. It features a 350 V drain-to-source breakdown voltage and a maximum on-resistance of 25 Ω at 120 mA. The device operates within a temperature range of -55°C to +150°C. Key electrical parameters include a gate-to-source voltage limit of ±20 V, a typical forward transconductance of 325 mmho, and input capacitance up to 300 pF. Switching characteristics specify turn-on delay of 10 ns, rise time of 15 ns, turn-off delay of 15 ns, and fall time of 20 ns.
Feature Summary
- Utilizes advanced vertical DMOS structure for high power handling with inherent positive-temperature coefficient.
- Free from thermal runaway and thermally induced secondary breakdown due to MOS architecture.
- Designed for fast switching speeds combined with low input capacitance and leakage currents.
Applications
- Normally-on switches
- Solid-state relays
- Linear amplifiers
- Constant-current sources
- Telecommunication switches
Procurement Notes
Verify the specific suffix 'N3' confirms the 3-lead TO-92 package configuration. Confirm 'G' indicates lead-free/ROHS-compliant packaging. Ensure the part number matches the depletion-mode requirement rather than enhancement-mode variants. Check datasheet revision history for any changes in pinout or thermal resistance values before finalizing procurement specifications.
Selection Notes
Select this component when high input impedance and normally-on operation are required. The TO-92 package limits continuous current to 120 mA and power dissipation to 1 W. For higher current applications requiring 500 mA, consider the DN2535N5-G in a TO-220 package. Verify that the 350 V breakdown voltage meets the circuit's peak voltage requirements.
Part Context
The DN2535 series comprises N-Channel Depletion-mode Vertical DMOS FETs available in multiple packages. The DN2535N3-G specifically denotes the TO-92 variant. Other versions include the DN2535N5-G (TO-220) and different media types like P003 (Reel). All share the same core semiconductor characteristics but differ in thermal management capabilities and physical form factor.
Replacement Considerations
DN2535N5-G
FAQ
What is the default state of the DN2535N3-G transistor?
The DN2535N3-G is a depletion-mode (normally-on) device, meaning it conducts current between the drain and source when the gate-to-source voltage is zero.
How does the DN2535N3-G handle thermal stress?
The device is free from thermal runaway and thermally induced secondary breakdown, characteristic of its MOS structure, allowing for stable operation across its specified temperature range.
