DN2535N5-G

$1.44

Description：MOSFET N-CH 350V 500MA TO220-3
Series：-
Mfr：Microchip Technology
Package：Tube

SKU:af734675b82a Category: Single FETs, MOSFETs Brand: Microchip Technology

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 350V 500MA TO220-3
Series：-
Mfr：Microchip Technology
Package：Tube
FET Type：N-Channel, Depletion Mode
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：350 V
Current - Continuous Drain (Id) @ 25°C：500mA (Tj)
Drive Voltage (Max Rds On, Min Rds On)：0V
Rds On (Max) @ Id, Vgs：25Ohm @ 120mA, 0V
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：300 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：15W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220-3
Package / Case：TO-220-3

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DN2535N5-G

Overview

The DN2535N5-G is an N-Channel Depletion-mode Vertical DMOS FET manufactured by Microchip Technology. It features a 350 V drain-to-source breakdown voltage and a maximum on-resistance of 25 Ω at 120 mA. The device supports a continuous drain current of 500 mA and dissipates up to 15 W in the TO-220 package. Operating temperatures range from -55°C to +150°C, with a gate-to-source voltage limit of ±20 V.

Feature Summary

Utilizes advanced vertical DMOS structure for high power handling and positive-temperature coefficient inherent in MOS devices.
Free from thermal runaway and thermally induced secondary breakdown due to MOS structure characteristics.
Designed for fast switching speeds with low input capacitance and high input impedance.

Applications

Normally-on Switches
Solid-state Relays
Converters
Linear Amplifiers
Constant-current Sources

Procurement Notes

Verify the specific suffix 'N5' corresponds to the 3-lead TO-220 package configuration required for your design. Confirm that the 'G' designation indicates lead-free and RoHS-compliant packaging as specified in the product identification system. Ensure the procurement channel sources directly from authorized distributors to guarantee component authenticity and traceability.

Selection Notes

Select this component when a normally-on (depletion-mode) switch or amplifier is required with high input impedance. The TO-220 package provides sufficient thermal dissipation for applications requiring up to 15 W power handling. Verify that the 350 V breakdown voltage meets the circuit's peak voltage requirements and that the 25 Ω on-resistance aligns with acceptable conduction losses.

Part Context

This part belongs to the DN2535 family of N-Channel Depletion-mode Vertical DMOS FETs. The DN2535N5-G specifically denotes the version packaged in a 3-lead TO-220 housing with lead-free compliance. Other variants in the series include the TO-92 package options, offering flexibility for different thermal and spatial constraints while maintaining identical electrical performance characteristics.

Replacement Considerations

Direct substitutes within the same family include DN2535N3-G (TO-92 package). Cross-brand replacements require matching depletion-mode operation, 350 V BVDSX, and comparable RDS(ON) specifications. Verify pinout compatibility, particularly for the TO-220 variant where Pin 4 is Drain.

FAQ

What is the default state of the DN2535N5-G transistor?

The DN2535N5-G is a depletion-mode (normally-on) transistor, meaning it conducts current between the drain and source when the gate-to-source voltage is zero.