ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N-CH 400V 500MA TO220-3
- Series：-
- Mfr：Microchip Technology
- Package：Tube
- FET Type：N-Channel, Depletion Mode
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：400 V
- Current - Continuous Drain (Id) @ 25°C：500mA (Tj)
- Drive Voltage (Max Rds On, Min Rds On)：0V
- Rds On (Max) @ Id, Vgs：25Ohm @ 120mA, 0V
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：300 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：15W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220-3
- Package / Case：TO-220-3
Download product information
Overview
The DN2540N5-G is an N-Channel Depletion-Mode Vertical DMOS FET manufactured by Microchip Technology (originally Supertex). It features a TO-220 package with a drain-to-source breakdown voltage of 400V and a maximum on-resistance of 25Ω. The device supports a continuous drain current of 500mA and dissipates up to 15W at 25°C case temperature. Operating temperatures range from -55°C to +150°C, with a gate-to-source voltage limit of ±20V.
Feature Summary
- Utilizes vertical DMOS structure for high input impedance and low input capacitance
- Free from thermal runaway and thermally-induced secondary breakdown
- Positive temperature coefficient inherent in MOS devices
- Fast switching speeds suitable for amplifying applications
Applications
- Normally-on switches
- Solid state relays
- Linear amplifiers
- Constant current sources
- Power supply circuits
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to confirm the exact package type and packing method. Confirm RoHS compliance status as indicated by the '-G' designation. Ensure the component meets the required lead-free specifications for your assembly process before procurement.
Selection Notes
Select this component when high breakdown voltage and normally-on operation are required. The TO-220 package provides higher power dissipation capabilities compared to smaller packages. Verify that the depletion mode characteristic aligns with the circuit design requirements for linear or switching applications.
Part Context
This part belongs to the DN2540 series of N-Channel Depletion-Mode Vertical DMOS FETs. The 'N5' suffix specifically denotes the TO-220 package option. The series is designed for applications requiring high input impedance and fast switching, combining bipolar-like power handling with MOS characteristics.
Replacement Considerations
Check datasheets for other DN2540 variants such as DN2540N3-G (TO-92) or DN2540N8-G (SOT-89) if package changes are acceptable. Verify pinout compatibility and thermal resistance differences when substituting with different package options within the same series.
