DN2625DK6-G

$2.85

Description：MOSFET 2N-CH 250V 1.1A 8DFN
Series：-

SKU:ae8937b9a49d Category: FET, MOSFET Arrays Brand: Microchip Technology

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 250V 1.1A 8DFN
Series：-
Mfr：Microchip Technology
Package：Tray
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：Depletion Mode
Drain to Source Voltage (Vdss)：250V
Current - Continuous Drain (Id) @ 25°C：1.1A
Rds On (Max) @ Id, Vgs：3.5Ohm @ 1A, 0V
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：7.04nC @ 1.5V
Input Capacitance (Ciss) (Max) @ Vds：1000pF @ 25V
Power - Max：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-VDFN Exposed Pad
Supplier Device Package：8-DFN (5x5)
Grade：-
Qualification：-

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DN2625DK6-G

Overview

The DN2625DK6-G is a dual N-channel depletion-mode vertical DMOS FET from Microchip Technology, housed in an 8-lead DFN package. It features a 250V drain-to-source breakdown voltage and a maximum gate-to-source voltage of ±20V. The device supports a continuous drain current of 1.1A and a pulsed current of 3.3A. Its static on-resistance is 3.5 Ohms at VGS=0V. Operating temperatures range from -55°C to +150°C.

Feature Summary

Utilizes advanced vertical DMOS structure for high input impedance and positive temperature coefficient.
Features very low gate threshold voltage designed specifically for source-driven applications.
Inherently free from thermal runaway and thermally induced secondary breakdown.
Optimized for fast switching speeds with low effective output capacitance.

Applications

Medical Ultrasound Beamforming
Ultrasonic Array-focusing Transmitter
Piezoelectric Transducer Waveform Drivers
High-speed Arbitrary Waveform Generator
Normally-on Switches

Procurement Notes

Verify the specific ordering suffix 'K6' confirms the 8-lead Dual Pad DFN package configuration. Ensure the 'G' suffix indicates lead-free and RoHS compliance status as defined by the manufacturer's product identification system. Confirm that the component matches the DS20005537B datasheet specifications before integration into production designs.

Selection Notes

Select this component when a normally-on switch or amplifier requires high breakdown voltage combined with low gate drive requirements. The dual configuration within a single package is suitable for bridge circuits or differential signaling. Verify that the 3.5 Ohm on-resistance meets the conduction loss constraints for the intended load current.

Part Context

This part belongs to the DN2625 family of N-channel Depletion-mode Vertical DMOS FETs. While the standard DN2625 is available in a single TO-252 D-PAK package, the DK6 variant specifically provides two MOSFETs in an 8-lead DFN package. This allows designers to utilize matched pairs in compact surface-mount layouts.

Replacement Considerations

The DN2625D-K4-G serves as the single-transistor alternative within the same family, offering identical electrical characteristics but in a TO-252 D-PAK package. Designers requiring only one channel should consider this option to optimize board space and cost.

FAQ

Is the DN2625DK6-G a normally-off device?

No, it is a depletion-mode (normally-on) transistor that conducts current when the gate-to-source voltage is zero.

What is the maximum operating junction temperature?

The maximum operating ambient temperature is listed as +150°C, which corresponds to the maximum junction temperature limit under specified conditions.