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Product Detailed Parameters
- Description：MOSFET N-CH 350V 135MA TO243AA
- Series：-
- Mfr：Microchip Technology
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel, Depletion Mode
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：350 V
- Current - Continuous Drain (Id) @ 25°C：135mA (Tj)
- Drive Voltage (Max Rds On, Min Rds On)：0V
- Rds On (Max) @ Id, Vgs：35Ohm @ 150mA, 0V
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：120 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：1.3W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-243AA (SOT-89)
- Package / Case：TO-243AA
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Overview
The DN3135N8-G is an N-Channel Depletion-mode Vertical DMOS FET manufactured by Microchip Technology. It features a 350 V drain-to-source breakdown voltage and a maximum on-resistance of 35 Ω. The device operates with a continuous drain current of 135 mA and dissipates up to 1.3 W in the SOT-89 package. Key electrical characteristics include a gate-to-source voltage range of ±20 V, a threshold voltage of 3.5 V, and forward transconductance of 140 mmho. Switching performance includes a turn-on delay of 10 ns and rise time of 15 ns.
Feature Summary
- Utilizes advanced vertical DMOS structure for high input impedance and low input capacitance
- Free from secondary breakdown and thermal runaway due to positive temperature coefficient
- Designed for fast switching speeds suitable for high-frequency applications
Applications
- Normally-on switches
- Solid state relays
- Linear amplifiers
- Constant-current sources
- Power supply circuits
Procurement Notes
Verify the specific suffix 'N8' corresponds to the SOT-89 (TO-243AA) package configuration when ordering. Confirm that the 'G' designation indicates lead-free and RoHS compliance as per the manufacturer's product identification system. Ensure the required media type matches the reel quantity specified for this package variant during procurement processing.
Selection Notes
Select the DN3135N8-G for applications requiring normally-on operation with high breakdown voltage capabilities. The SOT-89 package provides higher power dissipation compared to smaller footprints. Consider the depletion mode characteristic which requires negative gate voltage to turn off. Evaluate thermal resistance requirements based on the specific PCB layout and ambient operating conditions.
Part Context
This component belongs to the DN3135 family of N-Channel Depletion-mode Vertical DMOS FETs. The 'N8' suffix specifically identifies the 3-lead SOT-89 package variant. The 'G' suffix denotes environmental compliance. This part is distinct from the K1 package version within the same functional family.
Replacement Considerations
DN3135K1-G
FAQ
What is the default state of the DN3135N8-G transistor?
The DN3135N8-G is a depletion-mode device, meaning it is normally-on at zero gate-to-source voltage.
How does the DN3135N8-G handle thermal stress?
The device is free from thermal runaway and thermally induced secondary breakdown due to its positive temperature coefficient inherent in MOS structures.
