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Product Detailed Parameters
- Description：MOSFET N-CH 450V 100MA TO243AA
- Series：-
- Mfr：Microchip Technology
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel, Depletion Mode
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：450 V
- Current - Continuous Drain (Id) @ 25°C：100mA (Tj)
- Drive Voltage (Max Rds On, Min Rds On)：0V
- Rds On (Max) @ Id, Vgs：60Ohm @ 100mA, 0V
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：120 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：1.3W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-243AA (SOT-89)
- Package / Case：TO-243AA
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Overview
The DN3145N8-G is an N-Channel Depletion-Mode Vertical DMOS FET manufactured by Microchip Technology (originally Supertex). It features a TO-243AA (SOT-89) package with a drain-to-source breakdown voltage of 450V and a maximum on-resistance of 60Ω. The device supports a continuous drain current of 100mA and operates within a temperature range of -55°C to +150°C. Key electrical characteristics include a saturated drain current of 120mA at VGS=0V, input capacitance of 120pF, and switching times with turn-on delay of 10ns and fall time of 35ns.
Feature Summary
- Utilizes advanced vertical DMOS structure for high input impedance and low input capacitance
- Free from secondary breakdown due to positive temperature coefficient inherent in MOS devices
- Fast switching speeds suitable for high-frequency applications
- Low on-resistance and low leakage currents
Applications
- Normally-on switches
- Solid state relays
- Converters
- Constant current sources
- Power supply circuits
Procurement Notes
Verify the specific ordering suffix 'N8' corresponds to the TO-243AA (SOT-89) package configuration as documented in the official datasheet. Confirm RoHS compliance status associated with the '-G' suffix through manufacturer documentation. Ensure thermal management requirements align with the specified junction-to-ambient resistance values provided in the thermal characteristics section.
Selection Notes
Select this component for applications requiring normally-on operation with high voltage blocking capabilities. Consider the 450V breakdown voltage and 60Ω on-resistance for appropriate load matching. Evaluate the SOT-89 package constraints against available PCB space and thermal dissipation needs. Verify that the depletion mode characteristic fits the circuit design logic without external biasing for the off-state.
Part Context
This part belongs to the DN3145 series of N-Channel Depletion-Mode Vertical DMOS FETs originally developed by Supertex Inc., now under Microchip Technology. The series is designed for switching and amplifying applications where high breakdown voltage and fast switching are critical. The DN3145N8-G specifically denotes the lead-free, RoHS-compliant version in the SOT-89 surface-mount package.
Replacement Considerations
Check for direct cross-reference availability from Microchip or authorized distributors. Verify pinout compatibility and package dimensions if substituting with other SOT-89 depletion-mode MOSFETs. Ensure replacement parts meet the 450V BVDSX and 60Ω RDS(ON) specifications.
