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DPF100C1200HB is listed in the Diode Arrays range at ChipApex. The manufacturer field lists IXYS. Its product description is DIODE ARRAY GP 1200V 50A TO247. Review the specifications below when checking this part for your BOM.
The DPF100C1200HB is a dual common cathode high-performance fast recovery diode rated for 1200 V repetitive peak reverse voltage and 50 A average forward current per diode. It features a TO-247-3L package with planar passivated chips designed for low leakage and short recovery times. Key electrical parameters include a maximum reverse recovery time of 75 ns at 25 °C, a typical junction-to-case thermal resistance of 0.7 K/W, and a non-repetitive surge forward current capability of 400 A.
Verify the manufacturer designation Littelfuse on official documentation, as the component originates from the IXYS acquisition. Confirm the specific packing mode (tube) and quantity requirements against the distributor's current stock listing. Ensure the ordering suffix matches the required package variant to avoid functional discrepancies.
Select this component for applications requiring high-voltage isolation and rapid switching speeds. The common cathode configuration allows for efficient integration into bridge or half-bridge topologies. Evaluate thermal management needs based on the specified junction temperature range and power dissipation limits under expected operating conditions.
This device belongs to the HiPerFRED series, characterized by high-speed recovery and low reverse recovery charge. It is engineered for use in demanding power electronics environments where efficiency and reliability are critical. The TO-247-3L package facilitates effective heat dissipation through direct mounting to heatsinks.
Consult official Littelfuse cross-reference documents for verified substitute part numbers. Do not assume compatibility with generic fast recovery diodes due to specific soft recovery characteristics and thermal ratings unique to this series.
The maximum reverse recovery time is 75 ns at a junction temperature of 25 °C.
The device contains two general purpose power switching diodes arranged in a common cathode configuration.
The typical maximum thermal resistance from junction to case is 0.7 K/W.
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