Diode Arrays DPF100C1200HB product image

DPF100C1200HB

$9.98
  • Description:DIODE ARRAY GP 1200V 50A TO247
  • Series:-

SKU:8016aea0afe3 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

DPF100C1200HB is listed in the Diode Arrays range at ChipApex. The manufacturer field lists IXYS. Its product description is DIODE ARRAY GP 1200V 50A TO247. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for DPF100C1200HB

  • Description:DIODE ARRAY GP 1200V 50A TO247
  • Series:-
  • Mfr:IXYS
  • Package:Tube
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):1200 V
  • Current - Average Rectified (Io) (per Diode):50A
  • Voltage - Forward (Vf) (Max) @ If:4.41 V @ 50 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):60 ns
  • Current - Reverse Leakage @ Vr:18 A @ 18 A
  • Operating Temperature - Junction:175°C
  • Mounting Type:Through Hole
  • Package / Case:TO-247-3
  • Supplier Device Package:TO-247 (IXTH)
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for DPF100C1200HB

DPF100C1200HB

Diode Arrays Overview

The DPF100C1200HB is a dual common cathode high-performance fast recovery diode rated for 1200 V repetitive peak reverse voltage and 50 A average forward current per diode. It features a TO-247-3L package with planar passivated chips designed for low leakage and short recovery times. Key electrical parameters include a maximum reverse recovery time of 75 ns at 25 °C, a typical junction-to-case thermal resistance of 0.7 K/W, and a non-repetitive surge forward current capability of 400 A.

Diode Arrays Feature Summary

  • Planar passivated chip construction ensures very low leakage current and robust switching performance.
  • Soft reverse recovery behavior minimizes electromagnetic interference and reduces turn-on losses in commutating switches.
  • High-frequency operation suitability provided by short recovery time and low reverse recovery charge.

Diode Arrays Applications

  • Antiparallel diodes for high-frequency switching devices
  • Snubber diodes in power circuits
  • Rectifiers in switch mode power supplies

Diode Arrays Procurement Notes

Verify the manufacturer designation Littelfuse on official documentation, as the component originates from the IXYS acquisition. Confirm the specific packing mode (tube) and quantity requirements against the distributor's current stock listing. Ensure the ordering suffix matches the required package variant to avoid functional discrepancies.

Diode Arrays Selection Notes

Select this component for applications requiring high-voltage isolation and rapid switching speeds. The common cathode configuration allows for efficient integration into bridge or half-bridge topologies. Evaluate thermal management needs based on the specified junction temperature range and power dissipation limits under expected operating conditions.

Diode Arrays Part Context

This device belongs to the HiPerFRED series, characterized by high-speed recovery and low reverse recovery charge. It is engineered for use in demanding power electronics environments where efficiency and reliability are critical. The TO-247-3L package facilitates effective heat dissipation through direct mounting to heatsinks.

Diode Arrays Replacement Considerations

Consult official Littelfuse cross-reference documents for verified substitute part numbers. Do not assume compatibility with generic fast recovery diodes due to specific soft recovery characteristics and thermal ratings unique to this series.

Diode Arrays FAQ

What is the maximum reverse recovery time specified for this device?

The maximum reverse recovery time is 75 ns at a junction temperature of 25 °C.

How is the internal structure configured within the package?

The device contains two general purpose power switching diodes arranged in a common cathode configuration.

What is the typical junction-to-case thermal resistance?

The typical maximum thermal resistance from junction to case is 0.7 K/W.

DPF100C1200HBDPF100C1200HB
$9.98
Buy Now