DRA2115G0L

Overview

The DRA2115G0L is a PNP pre-biased transistor manufactured by Panasonic Industry. It integrates a single PNP bipolar junction transistor with built-in bias resistors in an SSmini3-F3-B surface-mount package. Key electrical specifications include a collector-emitter breakdown voltage (VCEO) of 50 V and a continuous collector current (IC) of 100 mA. The device features a typical input resistance of 100 kΩ, a DC current gain (hFE) minimum of 60 at IC=5mA/VCE=10V, and a saturation voltage (VCE(sat)) maximum of 250 mV at IB=300µA/IC=10mA. Power dissipation is rated at 150 mW, with an operating temperature range from -55°C to +150°C.

Feature Summary

• Integrates a PNP transistor with built-in bias resistors for simplified circuit design
• Compact SSmini3-F3-B surface-mount package suitable for space-constrained applications
• High-speed switching capability with transition frequency up to 150 MHz
• Low saturation voltage for efficient power handling

Applications

• Switching circuits in consumer electronics
• Driver stages for relays and small motors
• Logic level translation interfaces
• General-purpose amplification and switching in industrial control systems

Procurement Notes

Verify the exact ordering suffix and revision status directly with Panasonic Industry or authorized distributors before procurement. Confirm that the component meets specific application requirements regarding thermal management and electrical ratings. Check for any recent lifecycle changes or obsolescence notices. Ensure compliance with relevant environmental regulations such as RoHS. Request official datasheets and quality certificates for validation.

Selection Notes

Select this component when a compact PNP switching solution with integrated biasing is required. Consider the 50 V voltage rating and 100 mA current capacity against load demands. Evaluate the thermal performance within the specified -55°C to +150°C range. Compare hFE and VCE(sat) parameters with alternative devices if specific gain or saturation characteristics are critical. Ensure the SSmini3 package fits the PCB layout constraints.

Part Context

The DRA2115G0L belongs to Panasonic's family of pre-biased transistors designed for replacing multiple discrete components. These devices simplify schematic design by combining a transistor and bias resistors into a single package. This series offers advantages in board space reduction and assembly cost efficiency compared to using separate transistors and resistors.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Consult Panasonic Industry technical support for verified cross-reference data or equivalent alternatives.