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The DRA2115T0L is a silicon PNP epitaxial planar transistor with a built-in resistor, designed for digital circuits. It operates in the Mini3-G3-B (SC-59A) surface-mount package. Key electrical ratings include a maximum collector current of -100 mA and a collector-emitter voltage of -50 V. The device features an internal input resistance of 100 kΩ and a total power dissipation of 200 mW at 25°C. It supports an operating ambient temperature range from -40°C to +85°C and can withstand junction temperatures up to +150°C.
Verify component authenticity by checking the marking symbol LT on the package against official Panasonic datasheets. Confirm compliance with EU RoHS and UL-94 V-0 standards during incoming inspection. Ensure storage conditions remain within specified limits to maintain product integrity before assembly.
Select this component when a complementary NPN counterpart like the DRC2115T0L is required for push-pull or differential configurations. Evaluate the -100 mA current limit and -50 V voltage rating against circuit demands. Consider the 100 kΩ built-in resistor value for base drive requirements in logic interfacing applications.
This part belongs to the Panasonic Transistors with Built-in Resistor series. It serves as the PNP complement to the NPN DRC2115T0L model. The device utilizes a silicon epitaxial planar structure optimized for compact digital switching applications requiring integrated biasing resistors.
The DRC2115T0L is documented as the direct complementary counterpart. Verify pinout compatibility and electrical symmetry if substituting between the NPN and PNP variants in existing designs.
The internal connection diagram specifies the input resistance R1 as 100 kΩ.
No. The documentation explicitly states that special applications such as automotive equipment require separate document exchange and are not covered under standard general use terms.
The absolute maximum rating for the junction temperature (Tj) is +150 °C.