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The DRA2123J0L is a single PNP pre-biased bipolar junction transistor manufactured by Panasonic Industry. It integrates an internal base resistor of 2.2 kOhms to simplify circuit design and reduce component count. The device features a Mini3-G3-B surface-mount package with dimensions of 2.9x2.8mm. Key electrical specifications include a collector-emitter breakdown voltage (VCEO) of 50 V and a continuous collector current rating of 100 mA. It operates within a temperature range up to +150 C, ensuring reliability in various electronic applications.
Verify the specific ordering suffix J0L against the official Panasonic datasheet to ensure correct packaging and variant selection. Confirm that the component meets RoHS compliance requirements for the intended market. Check for End-of-Life status or alternative sourcing options as availability may be limited. Ensure the selected package type matches the PCB footprint requirements.
Select this component when a PNP configuration with integrated biasing is required for compact designs. The 50 V rating suits low-voltage logic interfaces. Consider the 2.2 kOhm internal resistance value for base drive compatibility. Verify thermal management needs given the +150 C maximum operating temperature limit.
This part belongs to the DRC/DRA series of pre-biased transistors from Panasonic Industry. These devices combine NPN or PNP transistors with resistors in a single package. The series is designed to replace discrete transistor-resistor combinations, reducing assembly time and board space while maintaining consistent electrical performance across production batches.
Public confirmed substitute part numbers are not available in the provided documentation. Cross-reference with Panasonic's official replacement guide or contact the manufacturer directly for verified alternatives.