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The DRA2124T0L is a pre-biased PNP bipolar junction transistor manufactured by Panasonic Electronic Components. It features a collector-emitter breakdown voltage of 50V and a maximum continuous collector current of 100mA. The device has a maximum power dissipation rating of 200mW and a collector cutoff current of 500nA. Packaged in a TO-236-3 (Mini3 G3) surface-mount case, it integrates internal biasing resistors to simplify circuit design.
Verify the component authenticity through authorized Panasonic distributors. Confirm RoHS compliance status and lead-free specifications against the latest datasheet revision. Ensure the TO-236-3 package dimensions match your PCB footprint requirements before finalizing procurement orders.
Select this component when a PNP pre-biased transistor with 50V rating and 100mA current capacity is required. The integrated resistor reduces external component count compared to discrete BJTs. Consider thermal management constraints due to the 200mW power dissipation limit in compact surface-mount layouts.
This part belongs to the Panasonic pre-biased transistor series designed for space-saving applications. It replaces multiple discrete components by combining a BJT with a biasing resistor in a single package. The Mini3 G3 form factor supports high-density PCB designs common in modern portable electronics.
Cross-reference with other manufacturers' PNP pre-biased transistors in TO-236 packages. Verify matching electrical parameters including Vceo, Ic, and internal resistance values. Ensure pinout compatibility and thermal characteristics align with the original design specifications.