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The DRA3113Z0L is a silicon PNP epitaxial planar type transistor designed for digital circuits, manufactured by Panasonic Electronic Components. It features a built-in bias resistor with a ratio of 4.55, housed in an SSSMini3 (SC-105AA) surface-mount package measuring 1.2x1.2mm. Key electrical parameters include a maximum collector-emitter voltage of 50 V, a maximum collector current of 0.1 A, and a minimum DC current gain (hFE) of 30. The device supports a maximum power dissipation of 100 mW and operates up to +150 °C junction temperature. It complies with RoHS standards and UL-94 V-0 flammability ratings.
Verify the specific ordering suffix and packaging configuration when sourcing. Confirm that the received components match the SSSMini3 package dimensions and marking codes specified in the official datasheet. Ensure compliance with RoHS directives and check for any updated revision notices from Panasonic Electronic Components prior to final procurement approval.
Select this component for designs requiring a compact PNP transistor with integrated biasing. The low saturation voltage and high current gain make it suitable for high-speed digital switching. Consider the 50 V voltage rating and 100 mW power dissipation limits when designing the thermal management strategy for the target application environment.
This part belongs to Panasonic's series of pre-biased bipolar transistors, which integrate resistors directly onto the silicon die to simplify external circuit requirements. These devices are engineered for space-constrained applications, offering a reliable alternative to discrete transistor-resistor combinations while maintaining consistent electrical characteristics across production batches.
Direct substitutes may include other Panasonic PNP pre-biased transistors within the same SSSMini3 package family, such as those with similar voltage and current ratings. Verify pinout compatibility and electrical parameter equivalence before substitution.