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The DRA3143Y0L is a silicon PNP epitaxial planar digital transistor manufactured by Panasonic Electronic Components. It integrates built-in bias resistors (R1: 4.7 kΩ, R2: 22 kΩ) within an SSSMini3-F2-B surface-mount package. Key electrical ratings include a maximum collector-emitter voltage of -50 V and a continuous collector current of -100 mA at 25°C. The device features a high forward current transfer ratio (hFE) with a typical value of 60 and a low collector-emitter saturation voltage of -0.25 V under specified conditions. It operates within an ambient temperature range of -40°C to +85°C and supports a junction temperature up to 150°C.
Verify the specific datasheet revision against the manufacturer's official records before finalizing procurement. Confirm that the component meets all absolute maximum rating limits for the intended operating environment. Ensure compliance with export control regulations if applicable. Check for any special application restrictions regarding safety-critical systems.
Select this component for applications requiring a compact PNP digital transistor with integrated biasing. Verify that the required input resistance aligns with the fixed 4.7 kΩ internal resistor. Ensure the system voltage does not exceed the -50 V collector-emitter rating. Consider the thermal dissipation capabilities when designing for high ambient temperatures.
This component belongs to the Panasonic DRA series of transistors with built-in resistors. It serves as a complementary device to the NPN DRC3143Y model. The part utilizes the SSSMini3 package format, designed for space-constrained surface-mount applications in consumer and industrial electronics.
The DRC3143Y is documented as the complementary NPN counterpart. Direct substitution requires verifying pin compatibility and ensuring the replacement matches the required PNP polarity and electrical characteristics.