SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The DRA3144W0L is a silicon PNP epitaxial planar digital transistor with built-in resistors, manufactured by Panasonic Electronic Components. It operates within an ambient temperature range of -40°C to +85°C and supports junction temperatures up to +150°C. The device features a collector-emitter voltage (VCEO) of -50 V and a continuous collector current (IC) of -100 mA. Internal resistance values are R1 at 47 kΩ and R2 at 22 kΩ, yielding a typical resistance ratio of 2.14. Key electrical characteristics include a forward current transfer ratio (hFE) of 60 and a collector-emitter saturation voltage (VCE(sat)) of -0.25 V under specified conditions.
Verify the specific ordering suffix against the latest Panasonic datasheet before procurement. Confirm that the SSSMini3-F2-B package dimensions align with your PCB land pattern requirements. Ensure compliance with ESD handling protocols during assembly to prevent damage to the semiconductor junctions.
Select this component when a PNP digital transistor with integrated biasing is required in a minimal footprint. Verify that the -50 V voltage rating and -100 mA current capacity meet the load requirements. Consider the thermal dissipation limits if operating near maximum ambient temperatures.
This part belongs to the Panasonic DRA series of transistors with built-in resistors. It serves as a complementary device to the NPN type DRC3144W. The component utilizes the SSSMini3 package, designed for high-density surface mount applications in consumer electronics and industrial control systems.
Direct substitutes must match the PNP configuration, -50 V rating, and SSSMini3 package. Verify equivalent internal resistor values (R1: 47kΩ, R2: 22kΩ) to ensure identical switching behavior. Consult manufacturer cross-reference lists for confirmed compatible alternatives.