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The Panasonic DRA9114E0L is a PNP digital transistor featuring a built-in base resistor. It operates with a maximum collector-emitter voltage of 50 V and a continuous collector current of 100 mA. The device has a minimum DC current gain (hFE) of 160 at specified conditions. It dissipates up to 125 mW of power and functions within an operating temperature range up to +150 °C. The component is housed in the SSMini3 F3 B surface-mount package, measuring 1.6 x 0.85 x 0.6 mm.
Verify the specific ordering suffix against official Panasonic documentation to ensure correct internal configuration. Confirm availability status directly with authorized distributors as supply levels fluctuate. Request updated datasheets prior to final design approval to validate all electrical parameters.
Select this component when a compact PNP digital transistor with integrated biasing is required. Ensure the 50 V collector-emitter voltage rating exceeds the maximum circuit voltage. Verify that the 10 kΩ internal resistance aligns with the driving source impedance requirements.
This part belongs to the Panasonic DRA series of pre-biased transistors. These devices combine a single bipolar junction transistor with internal resistive networks. The series offers various resistance values and package options to suit different switching speeds and drive capabilities.
Publicly confirmed substitute part numbers are not available in the provided reference data. Evaluate alternative PNP digital transistors with identical pinouts and matching electrical ratings only after verifying compatibility through official cross-reference tools.